Effect of crucible location on heat transfer in GaN crystal growth using Na flux method
Effect of crucible location on heat transfer in GaN crystal growth using Na flux method
复制标题
坩埚位置对 Na 熔剂法生长 GaN 晶体传热的影响
DOI：
10.1016/j.jcrysgro.2022.126868
复制
发表时间：
2022-09
影响因子：
1.8
通讯作者：
Lijun Liu
中科院分区：
文献类型：
--
作者：
Jinping Luo;Jiangliu Huang;Lijun Liu
• GaN 生长系统中的熔体对流由径向T 梯度驱动。 • 降低坩埚位置可增强G/L 界面下的熔体流动。 • 降低坩埚位置会显着增加熔体中的氮过饱和度。针对采用Na通量法的GaN单晶生长系统，建立了考虑对流、传导、辐射和传质的全局传热模型。进行全局模拟以研究坩埚位置对生长过程中传热传质的影响。研究发现坩埚位置对熔体中的传热有显着影响。当坩埚向下移动时，熔体上部区域的流动增强，而靠近坩埚底部的区域流动减弱。这种流动结构导致坩埚底部具有较高的过饱和度，有利于加速结晶。因此，可以得出结论，应适当降低坩埚位置，以获得更好的结晶条件。该研究为 GaN 生长系统的设计提供了方向。
• The melt convection in the GaN growing system is driven by radial T gradient. • Lowering the crucible position enhances the melt flow under the G/L interface. • Decrease the crucible position increases the N supersaturation in the melt significantly. A global model of heat transfer, considering convection, conduction, radiation as well as mass transfer, is established for GaN single crystal growth system employing the Na flux method. Global simulations are carried out to investigate the effects of crucible locations on the heat and mass transfer during growing. It was found that the crucible location has a significant effect on the heat transfer in the melt. When the crucible moves down, the flow in the upper region of melt is enhanced, while that near the crucible bottom is weaken. This flow structure leads to high supersaturation at the crucible bottom, which is favorable to accelerate crystallization. Therefore, it can be concluded that the crucible location should be lowered properly to achieve a better condition for crystallization. The research provides directions to the design of GaN growing systems.
登录
查看更多内容
影响因子：
2.3
作者：
M. Imade;Yasuhiro Hirabayashi;Y. Konishi;H. Ukegawa;N. Miyoshi;M. Yoshimura;T. Sasaki;Y. Kitaoka;Y. Mori
通讯作者：
M. Imade;Yasuhiro Hirabayashi;Y. Konishi;H. Ukegawa;N. Miyoshi;M. Yoshimura;T. Sasaki;Y. Kitaoka;Y. Mori
影响因子：
1.8
作者：
F. Kawamura;M. Morishita;Masaki Tanpo;M. Imade;M. Yoshimura;Y. Kitaoka;Y. Mori;T. Sasaki
通讯作者：
F. Kawamura;M. Morishita;Masaki Tanpo;M. Imade;M. Yoshimura;Y. Kitaoka;Y. Mori;T. Sasaki
DOI：
10.1002/pssa.200983482
发表时间：
2010-06-01
影响因子：
2
作者：
Mori, Y.;Kitaoka, Y.;Sasaki, T.
通讯作者：
Sasaki, T.
影响因子：
1.8
作者：
A. Yoshikawa;E. Ohshima;T. Fukuda;H. Tsuji;K. Oshima
通讯作者：
A. Yoshikawa;E. Ohshima;T. Fukuda;H. Tsuji;K. Oshima
影响因子：
2.1
作者：
Mingbin Zhou;Zhenrong Li;Jingsi Li;S. Fan;Zhuo Xu
通讯作者：
Mingbin Zhou;Zhenrong Li;Jingsi Li;S. Fan;Zhuo Xu