CdS@SiO2 Core-Shell Electroluminescent Nanorod Arrays Based on a Metal-Insulator-Semiconductor Structure.
CdS@SiO2 Core-Shell Electroluminescent Nanorod Arrays Based on a Metal-Insulator-Semiconductor Structure.
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基于金属-绝缘体-半导体结构的CdS@SiO2核壳电致发光纳米棒阵列
DOI:
10.1002/smll.201601548
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发表时间:
2016-08
期刊:
影响因子:
13.3
通讯作者:
Pan Caofeng
中科院分区:
文献类型:
--
作者:
Wang Chunfeng;Peng Dengfeng;Zhao Jing;Bao Rongrong;Li Tianfeng;Tian Li;Dong Lin;Shen Changyu;Pan Caofeng
Enormous advancement has been achieved in the field of one-dimensional (1D) semiconductor light-emitting devices (LEDs), however, LEDs based on 1D CdS nanostructures have been rarely reported. The fabrication of CdS@SiO2 core-shell nanorod array LEDs based on a Au-SiO2 -CdS metal-insulator-semiconductor (MIS) structure is presented. The MIS LEDs exhibit strong yellow emission with a low threshold voltage of 2.7 V. Electroluminescence with a broad emission ranging from 450 nm to 800 nm and a shoulder peak at 700 nm is observed, which is related to the defects and surface states of the CdS nanorods. The influence of the SiO2 shell thickness on the electroluminescence intensity is systematically investigated. The devices have a high light-emitting spatial resolution of 1.5 μm and maintain an excellent emission property even after shelving at room temperature for at least three months. Moreover, the fabrication process is simple and cost effective and the MIS device could be fabricated on a flexible substrate, which holds great potential for application as a flexible light source. This prototype is expected to open up a new route towards the development of large-scale light-emitting devices with excellent attributes, such as high resolution, low cost, and good stability.
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影响因子:
17.6
作者:
Guo, Wenxi1, 2;Xu, Chen1;Zhu, Guang1;Pan, Caofeng1;Lin, Changjian2;Wang, Zhong Lin1
通讯作者:
Wang, Zhong Lin1
影响因子:
4
作者:
Li Xin;Qi Junjie;Zhang Qi;Wang Qi;Yi Fang;Wang Zengze;Zhang Yue
通讯作者:
Zhang Yue
影响因子:
41.2
作者:
Esposito, Daniel V.;Levin, Igor;Talin, A. Alec
通讯作者:
Talin, A. Alec
影响因子:
17.1
作者:
Caofeng Pan;Zhixiang Luo;Chen Xu;Jun Luo;R. Liang;G. Zhu;Wenzhuo Wu;Wenxi Guo;Xingxu Yan-Xingxu-Ya
通讯作者:
Caofeng Pan;Zhixiang Luo;Chen Xu;Jun Luo;R. Liang;G. Zhu;Wenzhuo Wu;Wenxi Guo;Xingxu Yan-Xingxu-Ya
影响因子:
3.4
作者:
Roy, Poulomi;Srivastava, Suneel Kumar
通讯作者:
Srivastava, Suneel Kumar