Structural characterization and anomalous Hall effect of Rh2MnGe thin films

Structural characterization and anomalous Hall effect of Rh2MnGe thin films
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Rh2MnGe薄膜的结构表征及反常霍尔效应

DOI:
10.1016/j.jmmm.2015.01.012
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发表时间:
2015
影响因子:
2.7
通讯作者:
G. Jakob
G. Jakob
中科院分区:
材料科学3区
文献类型:
--
作者:
M. Emmel;G. Jakob

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本文介绍了用脉冲激光沉积法生长的L2 1-order外延Rh 2 MnGe Heusler薄膜的制备、结构研究和输运性质。在[0 1 1] Rh 2 MnGe → [0 1 0] MgO的(1 0 0)MgO衬底上,薄膜以(1 0 0)取向生长.(4 0 0)反射的摇摆曲线宽度小于1°,并随沉积温度的升高而减小。薄膜的平坦表面允许光刻图案化,从而能够进行定量磁输运测量。我们测量了电阻率和霍尔效应。我们建议斜散射的温度依赖性的异常霍尔效应中的主导作用,与理论上预期的斜散射超净限制。我们的研究结果是在协议与以前报道的小轨道时刻铑2锰锗大块材料探测磁X射线吸收光谱测量。
We present the preparation, structural investigations, and transport properties of L2 1-ordered epitaxial Rh 2 MnGe Heusler thin films grown by pulsed laser deposition. The films grow (1 0 0) oriented on (1 0 0) MgO substrate with [0 1 1] Rh 2 MnGe∥[0 1 0] MgO. The rocking curve widths of (4 0 0) reflections are below 1° and decrease with increasing deposition temperature. The flat surface of the thin films allowed lithographic patterning enabling quantitative magnetotransport measurements. We measured resistivity and the Hall effect. We suggest skew scattering as the dominant effect in the temperature dependent anomalous Hall effect, consistent with the theoretically expected skew scattering in the superclean limit. Our findings are in agreement with previously reported small orbital moments in Rh 2 MnGe bulk material probed by magnetic x-ray absorption spectroscopy measurements.
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