Structural characterization and anomalous Hall effect of Rh2MnGe thin films
Structural characterization and anomalous Hall effect of Rh2MnGe thin films
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Rh2MnGe薄膜的结构表征及反常霍尔效应
DOI:
10.1016/j.jmmm.2015.01.012
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发表时间:
2015
影响因子:
2.7
通讯作者:
G. Jakob
中科院分区:
文献类型:
--
作者:
M. Emmel;G. Jakob
We present the preparation, structural investigations, and transport properties of L2 1-ordered epitaxial Rh 2 MnGe Heusler thin films grown by pulsed laser deposition. The films grow (1 0 0) oriented on (1 0 0) MgO substrate with [0 1 1] Rh 2 MnGe∥[0 1 0] MgO. The rocking curve widths of (4 0 0) reflections are below 1° and decrease with increasing deposition temperature. The flat surface of the thin films allowed lithographic patterning enabling quantitative magnetotransport measurements. We measured resistivity and the Hall effect. We suggest skew scattering as the dominant effect in the temperature dependent anomalous Hall effect, consistent with the theoretically expected skew scattering in the superclean limit. Our findings are in agreement with previously reported small orbital moments in Rh 2 MnGe bulk material probed by magnetic x-ray absorption spectroscopy measurements.
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影响因子:
3.2
作者:
Imort, I. -M.;Thomas, P.;Thomas, A.
通讯作者:
Thomas, A.
DOI:
10.1088/0022-3727/42/8/084001
发表时间:
2009-04
期刊:
Journal of Physics D: Applied Physics
影响因子:
--
作者:
P. Klaer;M. Kallmayer;H. Elmers;L. Basit;J. Thöne;S. Chadov;C. Felser
通讯作者:
P. Klaer;M. Kallmayer;H. Elmers;L. Basit;J. Thöne;S. Chadov;C. Felser
影响因子:
3.2
作者:
HAMES, EA;CRANGLE, J
通讯作者:
CRANGLE, J
影响因子:
4
作者:
Peters, B.;Alfonsov, A.;Yang, F. Y.
通讯作者:
Yang, F. Y.
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
Saadi Berri;D. Maouche;M. Ibrir;F. Zerarga;L. Louail;Y. Medkour
通讯作者:
Y. Medkour