Driving Control of GaN Devices for Transient Response Improvement of Voltage Regulator
Driving Control of GaN Devices for Transient Response Improvement of Voltage Regulator
复制标题
GaN器件的驱动控制改善稳压器的瞬态响应
DOI：
10.1109/tpel.2022.3192401
复制
发表时间：
2022-12
影响因子：
6.7
通讯作者：
Xu Yang
中科院分区：
文献类型：
--
作者：
Kangping Wang;Gaohao Wei;Jiarui Wu;Qingyuan Gao;Wenjie Chen;Xu Yang
随着微处理器的不断发展，对暂态过程中的电压调节器（VR）提出了更严格的电压调节要求。本文提出了一种GaN器件的驱动控制方法，以改善VR的瞬态响应。当GaN器件反向导通时，其源漏电压可以由其栅极电压控制。在负载降压瞬态期间，GaN器件的反向导通电压自然地施加在电感器两端，这可以用于加速电感器电流的变化率。结果，在负载降压瞬态期间，可以减小输出电压的过冲。该方法不需要对电源电路进行修改，易于实现。最后通过实验验证了该方法的有效性。结果表明，采用该方法，输出电压超调量减少了550025;，过渡时间缩短了800025;。结果还表明，在相同过电压下，采用该方法可使输出电容减少570025;，过渡时间减少770025;，从而提高了VR电路的功率密度，节约了成本。
With the continuous development of microprocessors, more stringent voltage regulation requirements have been put forward for the voltage regulators (VR) in the transient process. This paper proposes a driving control method for GaN devices to improve the transient response of the VR. When the GaN device conducts reverse, its source-drain voltage can be controlled by its gate voltage. During load step-down transient, the reverse conduction voltage of the GaN device is naturally applied across the inductor, which can be utilized to speed up the change rate of the inductor current. As a result, the overshoot of the output voltage can be reduced during load step-down transient. The proposed method does not need to modify the power circuit, and is easy to implement. Finally, the effectiveness of the proposed method is verified by experiments. The results show that the output voltage overshoot is reduced by 550025;, and the transition time is shortened by 800025; using the proposed method. The results also show that with the same overvoltage, using the proposed method can reduce the output capacitance by 570025; and the transition time by 770025;, thereby increasing the power density of the VR circuit and saving costs.
登录
查看更多内容
影响因子：
6.7
作者：
J. Baek;Youssef Elasser;K. Radhakrishnan;H. Gan;J. Douglas;H. Krishnamurthy;Xin Li;Shuai Jiang;C. Sullivan;Minjie Chen
通讯作者：
J. Baek;Youssef Elasser;K. Radhakrishnan;H. Gan;J. Douglas;H. Krishnamurthy;Xin Li;Shuai Jiang;C. Sullivan;Minjie Chen
影响因子：
7.7
作者：
Virginia Li;Qiang Li;F. Lee;Pei-hsin Liu
通讯作者：
Virginia Li;Qiang Li;F. Lee;Pei-hsin Liu
影响因子：
6.7
作者：
Millan, Jose;Godignon, Philippe;Rebollo, Jose
通讯作者：
Rebollo, Jose
半桥电路中增强型GaN器件的不稳定性分析和振荡抑制
影响因子：
6.7
作者：
Wang Kangping;Yang Xu;Wang Laili;Jain Praveen
通讯作者：
Jain Praveen
影响因子：
6.7
作者：
D. Lu;J.C.P. Liu;F. Poon;B. Pong
通讯作者：
D. Lu;J.C.P. Liu;F. Poon;B. Pong