Research on surface nano-texturation and wet-chemical passivation of multi-crystalline silicon wafer
Research on surface nano-texturation and wet-chemical passivation of multi-crystalline silicon wafer
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多晶硅片表面纳米织构及湿化学钝化研究
DOI：
10.1007/s10854-017-7832-3
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发表时间：
2017-09
期刊：
影响因子：
--
通讯作者：
Zhengjie Chen
中科院分区：
文献类型：
--
作者：
YuXin Zou;Shaoyuan Li;Wenhui Ma;Zhao Ding;Fengshuo Xi;Yun Lei;Zhengjie Chen
表面纳米纹理技术因能捕获太阳光以提高太阳能电池的效率而引起人们的广泛关注。硅纳米线(SiNWs)阵列具有优良的减反射性能，有望提高太阳能电池的光电转换效率，但有效载流子寿命的恶化严重限制了太阳能器件效率的提高。到目前为止，SiNWs结构对有效载流子寿命的影响尚不清楚。本文详细研究了工艺参数对织构MC-Si的形貌结构和有效载流子寿命的影响。首次发现SiNW阵列长度与有效载流子寿命呈负指数关系。此外，还研究了乙醇碘(I-E)浓度、浸泡时间和表面处理(有无天然氧化物)对SiNWs阵列表面钝化的影响。研究发现，长度较短的SiNWs阵列可以实现更有效的表面钝化。同时，HF浸渍处理有利于SiNW的钝化，这归因于解离能较低的Si-Hx终止。
Surfaces nano-texturing has triggered off much attention for trapping sunlight to improve the efficiency of solar cells. Silicon nanowire (SiNWs) arrays, with excellent antireflection performance, will hopefully improve photoelectric conversion of solar cells, however, the deteriorated effective carrier lifetime seriously limits efficiency enhancement of solar devices. Until now, the effect of SiNWs structure on effective carrier lifetime remains unexplored. Herein, the effects of fabrication parameters on the morphology structure and effective carrier lifetime of textured mc-Si were studied in detail. We also firstly discover that the relationship of SiNWs arrays length and effective carrier lifetime shows the negative exponential relation. Moreover, the effects of ethanolic iodine (I–E) concentration, immersion time, and surface pre-conditioning (with and without native oxide) on surface passivation of SiNWs arrays were investigated. It is found that more effective surface passivation could be achieved for the SiNWs arrays with shorter length. Meanwhile, the HF dipping pretreatment is conducive for SiNWs passivation, and which is attributed to Si–Hxtermination with lower dissociation energy.
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影响因子：
4
作者：
S. Kalem;M. Rosenbauer
通讯作者：
S. Kalem;M. Rosenbauer
影响因子：
13.3
作者：
Peng, KQ;Xu, Y;Zhu, J
通讯作者：
Zhu, J
DOI：
10.4324/9781315766416
发表时间：
1986
期刊：
--
影响因子：
--
作者：
David Hyman Gordon
通讯作者：
David Hyman Gordon
影响因子：
10.1
作者：
Talwatkar, S. S.;Sunatkari, A. L.;Muley, G. G.
通讯作者：
Muley, G. G.
影响因子：
6.7
作者：
Zeng-Wang Zhao;Ping Li;Yi Wei;Chunxi Lu;X. Tan;Aimin Liu
通讯作者：
Zeng-Wang Zhao;Ping Li;Yi Wei;Chunxi Lu;X. Tan;Aimin Liu