Raman Spectrum of Epitaxial Graphene on SiC (0001) by Pulsed Electron Irradiation
Raman Spectrum of Epitaxial Graphene on SiC (0001) by Pulsed Electron Irradiation
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脉冲电子辐照在 SiC (0001) 上外延石墨烯的拉曼光谱
DOI：
10.1088/0256-307x/27/4/046803
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发表时间：
2010-04
影响因子：
3.5
通讯作者：
Chen Xiao-Long
中科院分区：
文献类型：
--
作者：
Huang Qing-Song;Guo Li-Wei;Wang Wen-Jun;Wang Gang;Wang Wan-Yan;Jia Yu-Ping;Lin Jing-Jing;Li Kang;Chen Xiao-Long
报道了用脉冲电子辐照（PEI）方法在Si面4H-SiC上外延生长的石墨烯（EG）的新的拉曼特征。随着石墨烯层数的增加，G峰和2D峰的频率显示蓝移，并接近块状高取向热解石墨的频率。结果表明，膨胀石墨是轻微的拉伸应变，并趋于无应变。同时，单个洛伦兹线形与SiC（0001）上EG的2D峰很好地拟合，并且它们的半峰全宽随着石墨烯层的增加而减小，这表明Si面上的多层EG也可以通过我们的PEI路线包含乱层堆积，而不是传统热退火方法中仅AB Bernal堆积。值得注意的是，堆叠方式对电荷载流子迁移率起着重要作用。因此，我们的研究结果将是在Si和C端SiC衬底上生长具有高载流子迁移率的优质石墨烯的候选者。背后的功能机制进行了研究和讨论。
We report new Raman features of epitaxial graphene (EG) on Si-face 4H-SiC prepared by pulsed electron irradiation (PEI). With increasing graphene layers, frequencies of G and 2D peaks show blue-shifts and approach those of bulk highly-oriented pyrolytic graphite. It is indicated that the EG is slightly tension strained and tends to be strain-free. Meanwhile, single Lorentzian line shapes are well fitted to the 2D peaks of EG on SiC(0001) and their full widths at half maximum decrease with the increasing graphene layers, which indicates that the multilayer EG on Si-face can also contain turbostratic stacking by our PEI route instead of only AB Bernal stacking by a traditional thermal annealing method. It is worth noting that the stacking style plays an important role on the charge carrier mobility. Therefore our findings will be a candidate for growing quality graphene with high carrier mobility both on the Si- and C-terminated SiC substrate. Mechanisms behind the features are studied and discussed.
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影响因子：
38.3
作者：
Das, A.;Pisana, S.;Sood, A. K.
通讯作者：
Sood, A. K.
影响因子：
3.7
作者：
Emtsev, K. V.;Speck, F.;Riley, J. D.
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Riley, J. D.
影响因子：
3.7
作者：
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通讯作者：
Henrard, Luc
影响因子：
4
作者：
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通讯作者：
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影响因子：
41.2
作者：
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通讯作者：
Novoselov, K. S.