Deep-ultraviolet electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures.
Deep-ultraviolet electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures.
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DOI：
10.1038/s41467-021-27524-w
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发表时间：
2021-12-08
影响因子：
16.6
通讯作者：
Kim J
中科院分区：
文献类型：
--
作者：
Song SB;Yoon S;Kim SY;Yang S;Seo SY;Cha S;Jeong HW;Watanabe K;Taniguchi T;Lee GH;Kim JS;Jo MH;Kim J
六方氮化硼（hBN）是具有约5.96 eV的宽带隙的货车德瓦耳斯半导体。尽管hBN具有间接带隙特性，但由高能电子或光子激发的电荷载流子通过强电子-声子相互作用在深紫外（DUV）频率下有效地发射发光，这表明潜在的DUV发光器件应用。然而，迄今为止，来自hBN的电致发光尚未在DUV频率下得到证实。在这项研究中，我们报告了室温下石墨烯/hBN/石墨烯异质结构的DUV电致发光和光电流产生。从石墨烯电极到hBN的带边缘中的隧穿载流子注入使得能够在DUV频率下实现突出的电致发光。另一方面，在DUV激光照射和外部偏置电压下，石墨烯电极有效地收集hBN中的光激发载流子，这产生高光电流。激光激发显微光谱表明，异质结构中的辐射复合和光生载流子激发过程主要源于hBN的原始结构和层错。我们的工作为基于hBN的高效深紫外光发射和检测器件提供了一条途径。在这里，作者报告的深紫外（DUV）电致发光和光电流产生的货车德瓦尔斯异质结构的基础上hBN晶体的观察，显示潜在的DUV光发射和检测设备。
Hexagonal boron nitride (hBN) is a van der Waals semiconductor with a wide bandgap of ~ 5.96 eV. Despite the indirect bandgap characteristics of hBN, charge carriers excited by high energy electrons or photons efficiently emit luminescence at deep-ultraviolet (DUV) frequencies via strong electron-phonon interaction, suggesting potential DUV light emitting device applications. However, electroluminescence from hBN has not been demonstrated at DUV frequencies so far. In this study, we report DUV electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures at room temperature. Tunneling carrier injection from graphene electrodes into the band edges of hBN enables prominent electroluminescence at DUV frequencies. On the other hand, under DUV laser illumination and external bias voltage, graphene electrodes efficiently collect photo-excited carriers in hBN, which generates high photocurrent. Laser excitation micro-spectroscopy shows that the radiative recombination and photocarrier excitation processes in the heterostructures mainly originate from the pristine structure and the stacking faults in hBN. Our work provides a pathway toward efficient DUV light emitting and detection devices based on hBN. Here, the authors report the observation of deep-ultraviolet (DUV) electroluminescence and photocurrent generation in van der Waals heterostructures based on hBN crystals, showing potential for DUV light emitting and detection devices.
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影响因子：
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作者：
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通讯作者：
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