Broad magnetic anisotropy regulation in as-deposited Pt/Co/MgO multilayers by tuning electronic coordination
Broad magnetic anisotropy regulation in as-deposited Pt/Co/MgO multilayers by tuning electronic coordination
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通过调节电子配位对沉积态 Pt/Co/MgO 多层膜进行广泛的磁各向异性调节
DOI：
10.1063/5.0056020
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发表时间：
2021-06
影响因子：
4
通讯作者：
Guanghua Yu
中科院分区：
文献类型：
--
作者：
Yongkang Zhao;Yukun Li;Fei Meng;Shuai Xie;Xiulan Xu;Baohe Li;Chun Feng;Guanghua Yu
磁性薄膜磁各向异性的调节对于开发磁存储和逻辑器件至关重要。传统的工作通过对沉积薄膜的后续处理（例如后退火处理或电场应用）实现了磁各向异性的有效可调。在这里，我们提出了一种有效的方法，通过调整电子配位来实现所制备薄膜中磁各向异性的直接和广泛的可调性。在 Pt/Co/MgO 多层膜的 Co 层中掺杂氮 (N) 原子，可以有效控制 Co 的电子配位，增强 Co 的 3dz2-r2 轨道占据，从而调节 Co-O 轨道杂化。因此，随着N掺杂，沉积薄膜的磁各向异性从面内方向变为垂直方向，导致磁各向异性能量显着增加2.48 × 106 erg/cm3。此外，保持垂直磁各向异性的临界Co厚度从1nm扩大到3nm，有利于增强纳米器件的稳定性。这些发现为调整磁性薄膜的磁各向异性以适应各种磁存储和逻辑器件的应用提供了有效的策略。
The regulation in the magnetic anisotropy of magnetic films is crucial for developing the magnetic storage and logic devices. The traditional work achieved an effective tunability of the magnetic anisotropy by a subsequent processing of the as-deposited film, such as a post-annealing treatment or electric field application. Here, we proposed an effective method to achieve a direct and broad tunability of the magnetic anisotropy in the as-prepared film by adjusting electronic coordination. Nitrogen (N) atoms were doped in the Co layer of Pt/Co/MgO multilayers to effectively control the electronic coordination of Co and enhance the 3dz2–r2 orbital occupancy of Co for modulating the Co–O orbital hybridization. Consequently, the magnetic anisotropy of the as-deposited film changed from in-plane to perpendicular direction with the N doping, resulting in a significant increment in the magnetic anisotropy energy by 2.48 × 106 erg/cm3. Furthermore, the critical Co thickness with maintaining the perpendicular magnetic anisotropy was enlarged from 1 to 3 nm, which is beneficial for enhancing the stability of nanodevices. These findings provide an effective strategy to tune the magnetic anisotropy of magnetic films toward the applications of various magnetic storage and logic devices.
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作者：
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通讯作者：
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