Multi-shot damage on Mo/Si multilayer induced by nanosecond EUV radiation
Multi-shot damage on Mo/Si multilayer induced by nanosecond EUV radiation
复制标题
纳秒 EUV 辐射对 Mo/Si 多层膜造成的多次损伤
DOI：
10.1063/5.0035490
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发表时间：
2021
期刊：
影响因子：
1.6
通讯作者：
Wang Zhanshan
中科院分区：
文献类型：
--
作者：
Li Wenbin;Pan Liuyang;Wang Chunlin;Zhang Zhe;Xie Chun;Huang Qiushi;Wang Zhanshan
Mo/Si多层膜作为工作在极紫外（EUV）波段的重要光学元件，其损伤机理引起了人们的广泛关注。利用纳秒级台式EUV光源，对Mo/Si多层膜反射镜进行了S-on-1 EUV辐照损伤实验，辐照次数为S = 1，2，5和10。结果表明，多炮损伤阈值遵循反幂律作为脉冲数的函数。基于原子力显微镜测量的损伤形貌解释了孵化效应。当Mo/Si多层膜反射镜暴露于高于单一损伤阈值的EUV能量密度时，层结构的致密化以及熔化和再固化过程是主要的损伤机制。还发现，在高注量下的弹坑深度和半高宽是独立的射击数，这是由MoSi 2间隔层的形成解释。
As a vital optical element working in the extreme ultraviolet (EUV) region, the damage mechanism on a Mo/Si multilayer has caught great attention. In this paper, using a nanosecond table-top EUV source, an S-on-1 EUV damage experiment was performed on a Mo/Si multilayer mirror with shot numbers S = 1, 2, 5, and 10. It was demonstrated that the multi-shot damage thresholds follow an inverse-power-law as a function of the pulse number. The incubation effect is explained based on the measured damage morphologies by an atomic force microscope. When the Mo/Si multilayer mirror was exposed to the EUV fluence above the single damage threshold, compaction of the layer structure and melting and resolidification processes are dominating the damage mechanism. It was also found that the crater depth and FWHM at high fluence are independent of the shot numbers, which is explained by the formation of the MoSi2 spacing layer.
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影响因子：
3.8
作者：
R. Sobierajski;S. Bruijn;A. Khorsand;Eric Louis;R. Kruijs;T. Burian;J. Chalupský;J. Cihelka;A. Gleeson;Justyna Grzonka;E. Gullikson;V. Hájková;S. Hau-Riege;L. Juha;M. Jurek;D. Klinger;J. Krzywiński;R. A. London;J. Pelka;T. Płociński;M. Rasinski;K. Tiedtke;S. Toleikis;L. Vyšín;H. Wabnitz;F. Bijkerk
通讯作者：
R. Sobierajski;S. Bruijn;A. Khorsand;Eric Louis;R. Kruijs;T. Burian;J. Chalupský;J. Cihelka;A. Gleeson;Justyna Grzonka;E. Gullikson;V. Hájková;S. Hau-Riege;L. Juha;M. Jurek;D. Klinger;J. Krzywiński;R. A. London;J. Pelka;T. Płociński;M. Rasinski;K. Tiedtke;S. Toleikis;L. Vyšín;H. Wabnitz;F. Bijkerk
DOI：
10.1038/lsa.2017.86
发表时间：
2017-11
期刊：
Light, science & applications
影响因子：
--
作者：
Döpp A;Mahieu B;Lifschitz A;Thaury C;Doche A;Guillaume E;Grittani G;Lundh O;Hansson M;Gautier J;Kozlova M;Goddet JP;Rousseau P;Tafzi A;Malka V;Rousse A;Corde S;Ta Phuoc K
通讯作者：
Ta Phuoc K
DOI：
10.1016/j.nima.2010.10.026
发表时间：
2011-04
影响因子：
1.4
作者：
A. Giglia;N. Mahne;A. Bianco;C. Svetina;S. Nannarone
通讯作者：
A. Giglia;N. Mahne;A. Bianco;C. Svetina;S. Nannarone
影响因子：
3.2
作者：
H. Takenaka;T. Kawamura;Y. Ishii;Satoru Asagiri
通讯作者：
H. Takenaka;T. Kawamura;Y. Ishii;Satoru Asagiri
影响因子：
3.8
作者：
Milov, Igor;Makhotkin, Igor A.;Bijkerk, Fred
通讯作者：
Bijkerk, Fred