Mechanism of the Key Impact of Residual Carbon Content on the Reliability of Integrated Resistive Random Access Memory Arrays
Mechanism of the Key Impact of Residual Carbon Content on the Reliability of Integrated Resistive Random Access Memory Arrays
复制标题
残余碳含量对集成阻变存储器阵列可靠性的关键影响机制
DOI：
10.1021/acs.jpcc.6b12771
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发表时间：
2017-03
影响因子：
3.7
通讯作者：
Wenger Christian
中科院分区：
文献类型：
--
作者：
Niu Gang;Cartoixa Xavier;Grossi Aless;ro;Zambelli Cristian;Olivo Piero;Perez Eduardo;Schubert Markus Andreas;Zaumseil Peter;Costina Joan;Schroeder Thomas;Wenger Christian
电阻式随机存储器（RRAM）要求高密度、低功耗和高可靠性。系统的统计电气，材料和理论研究表明，在这项工作中，指出和澄清的关键影响的碳残留物的电阻开关（RS），特别是耐久性，集成的HfO2为基础的4 kbit RRAM阵列。通过密度泛函理论（DFT）计算，在纳米尺度上理解了碳原子与氧空位相互作用并作为细丝的机制。在缺氧环境下，碳原子倾向于填充氧空位（VO··）位置，并且可以形成导电细丝，与原始VO··细丝相比，导电细丝需要更高的能量来断裂。通过控制残余碳浓度低于4%，实现了高可靠性的基于HfO2的集成4kbit RRAM阵列，这对于未来的非易失性存储器具有很大的兴趣。
Resistive random access memories (RRAM) require high density, low power consumption and high reliability. Systematic statistic electrical, material and theoretical studies were demonstrated in this work to point out and clarify a key impact of carbon residues on the resistive switching (RS), particularly the endurance, of the integrated HfO2-based 4 kbit RRAM array. The mechanism of the carbon atoms interacting with oxygen vacancies and serving also as filament was understood in nanoscale by performing density functional theory (DFT) calculations. Under an oxygen-deficient environment, carbon atoms tend to fill in oxygen vacancy (VO··) sites and could form conductive filaments which require higher energy to be broken compared to the original VO·· filaments. By controlling the residual carbon concentration lower than 4%, highly reliable HfO2-based integrated 4 kbit RRAM array was achieved, which is of great interest for future nonvolatile memories.
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影响因子：
4
作者：
K. Xue;P. Blaise;L. Fonseca;G. Molas;E. Vianello;B. Traoré;B. D. Salvo;G. Ghibaudo;Y. Nishi
通讯作者：
K. Xue;P. Blaise;L. Fonseca;G. Molas;E. Vianello;B. Traoré;B. D. Salvo;G. Ghibaudo;Y. Nishi
DOI：
10.1088/0022-3719/18/5/005
发表时间：
1985-01-01
期刊：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS
影响因子：
--
作者：
LESLIE, M;GILLAN, MJ
通讯作者：
GILLAN, MJ
影响因子：
4
作者：
Moonju Cho;D. Jeong;Jaehoon Park;Hong-bae Park;S. Lee;T. Park;C. Hwang;G. Jang;Jaehack Jeong
通讯作者：
Moonju Cho;D. Jeong;Jaehoon Park;Hong-bae Park;S. Lee;T. Park;C. Hwang;G. Jang;Jaehack Jeong
影响因子：
6.7
作者：
Ji-Wook Yoon;J. Yoon;Jong‐Heun Lee;C. Hwang
通讯作者：
Ji-Wook Yoon;J. Yoon;Jong‐Heun Lee;C. Hwang
DOI：
10.1149/06604.0287ecst
发表时间：
2015-03
期刊：
--
影响因子：
--
作者：
Y. Sharma;S. Pavunny;J. Scott;R. Katiyar
通讯作者：
Y. Sharma;S. Pavunny;J. Scott;R. Katiyar