Polymer-sorted semiconducting carbon nanotube networks for high-performance ambipolar field-effect transistors.
Polymer-sorted semiconducting carbon nanotube networks for high-performance ambipolar field-effect transistors.
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DOI:
10.1021/am506971b
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发表时间:
2015-01-14
影响因子:
9.5
通讯作者:
Zaumseil, Jana
中科院分区:
文献类型:
--
作者:
Schiessl, Stefan P.;Froehlich, Nils;Held, Martin;Gannott, Florentina;Schweiger, Manuel;Forster, Michael;Scherf, Ullrich;Zaumseil, Jana
关键词:
Efficient selection of semiconducting single-walled carbon nanotubes (SWNTs) from as-grown nanotube samples is crucial for their application as printable and flexible semiconductors in field-effect transistors (FETs). In this study, we use atactic poly(9-dodecyl-9-methyl-fluorene) (a-PF-1-12), a polyfluorene derivative with asymmetric side-chains, for the selective dispersion of semiconducting SWNTs with large diameters (>1 nm) from plasma torch-grown SWNTs. Lowering the molecular weight of the dispersing polymer leads to a significant improvement of selectivity. Combining dense semiconducting SWNT networks deposited from an enriched SWNT dispersion with a polymer/metal-oxide hybrid dielectric enables transistors with balanced ambipolar, contact resistance-corrected mobilities of up to 50 cm2·V–1·s–1, low ohmic contact resistance, steep subthreshold swings (0.12–0.14 V/dec) and high on/off ratios (106) even for short channel lengths (<10 μm). These FETs operate at low voltages (<3 V) and show almost no current hysteresis. The resulting ambipolar complementary-like inverters exhibit gains up to 61.
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