Direct-written polymer field-effect transistors operating at 20 MHz.
Direct-written polymer field-effect transistors operating at 20 MHz.
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DOI：
10.1038/srep38941
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发表时间：
2016-12-12
影响因子：
4.6
通讯作者：
Caironi M
中科院分区：
文献类型：
--
作者：
Perinot A;Kshirsagar P;Malvindi MA;Pompa PP;Fiammengo R;Caironi M
印刷聚合物电子产品长期以来一直致力于为可穿戴设备、医疗保健、诊断、自动化和便携式设备提供分布式、灵活、轻便和具有成本效益的应用，从而实现技术革命。虽然在有机半导体迁移率方面已经取得了令人印象深刻的进展，但场效应晶体管（FET）（任何电路的基本构建块）仍然显示出有限的操作速度，从而限制了它们的真实的适用性。到目前为止，利用有机FET实现数十MHz范围（包括驱动高分辨率显示器的许多应用的阈值）的尝试依赖于采用复杂的光刻技术和/或复杂的架构，破坏了整个概念。在这项工作中，我们展示了聚合物场效应晶体管，它可以工作到20 MHz，并通过可扩展的印刷技术和直接写入方法与一个完全无掩模的程序。这是通过将用于烧结高分辨率金属电极的fs激光工艺与高迁移率聚合物半导体的大面积涂覆技术相结合来实现的，从而轻松实现寄生率降至0.19 pF mm-1的微米级通道，根据简单且可扩展的工艺流程。
Printed polymer electronics has held for long the promise of revolutionizing technology by delivering distributed, flexible, lightweight and cost-effective applications for wearables, healthcare, diagnostic, automation and portable devices. While impressive progresses have been registered in terms of organic semiconductors mobility, field-effect transistors (FETs), the basic building block of any circuit, are still showing limited speed of operation, thus limiting their real applicability. So far, attempts with organic FETs to achieve the tens of MHz regime, a threshold for many applications comprising the driving of high resolution displays, have relied on the adoption of sophisticated lithographic techniques and/or complex architectures, undermining the whole concept. In this work we demonstrate polymer FETs which can operate up to 20 MHz and are fabricated by means only of scalable printing techniques and direct-writing methods with a completely mask-less procedure. This is achieved by combining a fs-laser process for the sintering of high resolution metal electrodes, thus easily achieving micron-scale channels with reduced parasitism down to 0.19 pF mm−1, and a large area coating technique of a high mobility polymer semiconductor, according to a simple and scalable process flow.
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影响因子：
3.2
作者：
Mandal, Saumen;Dell'Erba, Giorgio;Caironi, Mario
通讯作者：
Caironi, Mario
影响因子：
4.6
作者：
Li, Jun;Zhao, Yan;Tan, Huei Shuan;Guo, Yunlong;Di, Chong-An;Yu, Gui;Liu, Yunqi;Lin, Ming;Lim, Suo Hon;Zhou, Yuhua;Su, Haibin;Ong, Beng S.
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Ong, Beng S.
影响因子：
4
作者：
Caironi, M.;Newman, C.;Sirringhaus, H.
通讯作者：
Sirringhaus, H.
影响因子：
1.9
作者：
Dell'Erba, Giorgio;Perinot, Andrea;Caironi, Mario
通讯作者：
Caironi, Mario
影响因子：
3.1
作者：
Kempa, H.;Hambsch, M.;Huebler, A. C.
通讯作者：
Huebler, A. C.