Density of States in Amorphous In-Ga-Zn-O Thin-Film Transistor under Negative Bias Illumination Stress
Density of States in Amorphous In-Ga-Zn-O Thin-Film Transistor under Negative Bias Illumination Stress
复制标题
负偏压照明应力下非晶In-Ga-Zn-O薄膜晶体管的态密度
DOI：
10.1149/2.001409jss
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发表时间：
2014
影响因子：
2.2
通讯作者：
Y. Uraoka
中科院分区：
文献类型：
--
作者：
Y. Ueoka;Y. Ishikawa;J. Bermundo;H. Yamazaki;Satoshi Urakawa;M. Fujii;M. Horita;Y. Uraoka
在玻璃衬底上制备了非晶In-Ga-Zn-O（a-IGZO）薄膜晶体管，研究了负偏压应力（NBS）和负偏压光照应力（NBIS）对薄膜晶体管态密度（DOS）的影响。对于-20 V的NBIS，阈值电压（Vth）向负方向移动，但在DOS曲线中没有观察到正离子化氧空位（Vo+或Vo ++）所期望的浅态增加。另一方面，对于-30 V的NBIS，观察到施加偏置应力前后导带边缘附近的DOS的变化。这表明NbIS产生了Vo+或Vo ++，而空穴在a-IGZO/SiO2界面的积累是引起Vth漂移的主要原因。
Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors on glass substrates were fabricated, and the density of state (DOS) in TFTs after a negative bias stress (NBS) and negative bias illumination stress (NBIS) was investigated. For a NBIS of− 20 V, the threshold voltage (V th) shifted toward the negative direction but an increase of shallow states expected as positively ionized oxygen vacancies (V o+ or V o++) were not observed in the DOS curves. On the other hand, for NBIS of− 30 V, changes in the DOS near the conduction band edge before and after applying a bias stress were observed. This suggests that V o+ or V o++ was generated by NBIS but accumulation of holes at the a-IGZO/SiO 2 interface mainly caused the V th shifts.
影响因子：
64.8
作者：
Nomura, K;Ohta, H;Hosono, H
通讯作者：
Hosono, H
影响因子：
3.2
作者：
Nomura, Kenji;Kamiya, Toshio;Hosono, Hideo
通讯作者：
Hosono, Hideo
影响因子：
1.5
作者：
Fujii, Mami;Yano, Hiroshi;Kwon, Jang Yeon
通讯作者：
Kwon, Jang Yeon