Investigation of the band alignment at MoS2/PtSe2 heterojunctions
Investigation of the band alignment at MoS2/PtSe2 heterojunctions
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MoS2/PtSe2 异质结能带排列的研究
DOI：
10.1063/1.5097248
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发表时间：
2019-05
影响因子：
4
通讯作者：
Qi Han
中科院分区：
文献类型：
--
作者：
Wang Wenjia;Li Kuilong;Wang Yang;Jiang Wenxin;Liu Xingyu;Qi Han
本文采用化学气相沉积法在Si衬底上生长了大面积连续单层MoS 2和三层PtSe 2薄膜，并采用转移技术制备了MoS 2/PtSe 2异质结构。在异质结的能带排列的研究，通过采用X射线光电子能谱测量，表明I型带形成在界面处。导带和价带偏移分别为0.85 eV和0.66 eV，这与从电子亲和势推导的结果一致。此外，在可见光区的光吸收的增强改善意味着这种异质结构在光电应用中具有巨大的潜力。本论文采用化学气相沉积法在Si衬底上生长了大面积连续单层MoS_2和三层PtSe_2薄膜，并采用转移技术制备了MoS_2/PtSe_2异质结构。在异质结的能带排列的研究，通过采用X射线光电子能谱测量，表明I型带形成在界面处。导带和价带偏移分别为0.85 eV和0.66 eV，这与从电子亲和势推导的结果一致。此外，在可见光区的光吸收的增强改善意味着这种异质结构在光电应用中具有巨大的潜力。该研究为相关器件的设计和制作提供了有希望的指导。
In this work, large-area continuous monolayer-MoS2 and triple-layer-PtSe2 films are grown on Si substrates by chemical vapor deposition and the MoS2/PtSe2 heterostructures are fabricated using transfer technology. The energy band alignment at the heterojunction is investigated by employing x-ray photoelectron spectroscopy measurements, indicating a type-I band formed at the interface. The conduction and valence band offsets are determined to be 0.85 eV and 0.66 eV, respectively, which is consistent with the results deduced from the electron affinity. Furthermore, the enhancing improvement of light absorption in the visible region implies that this heterostructure has great potential in optoelectronic applications. This study provides promising guidance for the related device design and fabrication.In this work, large-area continuous monolayer-MoS2 and triple-layer-PtSe2 films are grown on Si substrates by chemical vapor deposition and the MoS2/PtSe2 heterostructures are fabricated using transfer technology. The energy band alignment at the heterojunction is investigated by employing x-ray photoelectron spectroscopy measurements, indicating a type-I band formed at the interface. The conduction and valence band offsets are determined to be 0.85 eV and 0.66 eV, respectively, which is consistent with the results deduced from the electron affinity. Furthermore, the enhancing improvement of light absorption in the visible region implies that this heterostructure has great potential in optoelectronic applications. This study provides promising guidance for the related device design and fabrication.
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