Tuning Electrical Conductance in Bilayer MoS2 through Defect-Mediated Interlayer Chemical Bonding.
Tuning Electrical Conductance in Bilayer MoS2 through Defect-Mediated Interlayer Chemical Bonding.
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通过缺陷介导的层间化学键合调节双层 MoS2 的电导率。
DOI：
10.1021/acsnano.0c03665
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发表时间：
2020-07
期刊：
影响因子：
17.1
通讯作者：
Miao Feng
中科院分区：
文献类型：
--
作者：
Wang Gang;Zhang Lili;Zhang Yubo;Cao Zhipeng;Wang Yu;Cao Tianjun;Wang Cong;Cheng Bin;Zhang Wenqing;Wan Xiangang;Lin Junhao;Liang Shi-Jun;Miao Feng
层间相互作用可以显著影响过渡金属二硫属化合物的电输运，是控制器件性能的有效途径。然而，它仍然是具有挑战性的，利用层间相互作用的弱层间耦合的材料，如原始的二硫化钼，以实现层依赖的可调输运行为。在这里，我们证明，通过在MoS 2晶格的Mo位中置换掺杂钒原子，钒掺杂的单层MoS 2器件表现出双极场效应特性，而其双层器件表现出重p型场效应特性，与原始单层和双层MoS 2器件形成鲜明对比，这两者都表现出类似的n型电输运行为。此外，掺杂的双层MoS 2器件的电导相对于掺杂的单层MoS 2器件的电导显著增强。采用第一性原理计算，我们发现，这种惊人的行为产生的电传输网络的存在与增强层间杂化的S-3 pz轨道之间的钒掺杂剂激活的双层MoS 2，这仍然是不存在的，在其单层对应。我们的工作表明，掺杂剂的作用不仅局限于面内电输运行为，还可以通过激活相邻层之间的面外相互作用来调节双层过渡金属二硫属化物的电输运，从而在电子和光电子器件中带来不同的应用。
Interlayer interaction could substantially affect the electrical transport in transition metal dichalcogenides, serving as an effective way to control the device performance. However, it is still challenging to utilize interlayer interaction in weakly interlayer-coupled materials like pristine MoS2 to realize layer-dependent tunable transport behavior. Here, we demonstrate that, by substitutional doping of vanadium atoms in the Mo sites of MoS2 lattice, vanadium-doped monolayer MoS2 device exhibits an ambipolar field effect characteristic while its bilayer device demonstrates a heavy p-type field effect feature, in sharp contrast to the pristine monolayer and bilayer MoS2 devices, both of which show similar n-type electrical transport behaviors. Moreover, the electrical conductance of the doped bilayer MoS2 device is drastically enhanced with respect to that of the doped monolayer MoS2 device. Employing first-principle calculations, we reveal that such striking behaviors arise from the presence of electrical transport networks associated with the enhanced interlayer hybridization of S-3pz orbitals between adjacent layers activated by vanadium dopants in the bilayer MoS2, which is nevertheless absent in its monolayer counterpart. Our work highlights that the effect of dopant is not only confined in the in-plane electrical transport behavior, but also could be used to activate out-of-plane interaction between adjacent layers to tailor the electrical transport of the bilayer transitional metal dichalcogenides, which may bring different applications in electronic and optoelectronic devices.
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