P-type InxGa1−xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-1019 cm−3 and device quality surface morphology
P-type InxGa1−xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-1019 cm−3 and device quality surface morphology
复制标题
P 型 InxGa1−xN 半块状模板 (0.02 < x < 0.16)，室温空穴浓度为 1019 cm−3 中部，器件质量表面形貌
作者：
E. L. Routh;M. Abdelhamid;P. Colter;N. El;S. Bedair
采用半体方法，通过金属有机化学气相沉积法制备了铟含量为2.4% ~ 15.2%的p-InxGa1−xN半体（p-SB）模板。与优化后的p-GaN相比，in含量为~ 15.2%的p-SB中空穴浓度从5.22 × 1017增加到5.28 × 1019 cm−3，增加了两个数量级。模板的电阻率和迁移率从p-GaN的3.13 Ω·cm和3.82 cm2/V s逐渐下降到p-SB的0.24 Ω·cm和0.48 cm2/V s， In含量为15.2%。通过温度相关的霍尔测量来估计p-SB模板的活化能。In含量为~ 15.2%的p-SB的活化能估计为29 meV。这些重掺杂的p-SB模板具有与GaN相当的材料质量。p-SB薄膜的原子力显微镜高度回溯显示出器件质量的表面形貌，均方根粗糙度在2.53 ~ 4.84 nm之间。目前的结果可以影响几种氮基器件的性能，如激光二极管、led、太阳能电池和光电探测器。
Using the semibulk approach, p-InxGa1−xN semibulk (p-SB) templates were grown with an indium content ranging from 2.4% to 15.2% via metalorganic chemical vapor deposition. When compared to optimized bulk p-GaN, the hole concentration in p-SB with an In content of ∼15.2% increased by two orders of magnitude from 5.22 × 1017 to 5.28 × 1019 cm−3. The resistivity and mobility of the templates decreased gradually from 3.13 Ω · cm and 3.82 cm2/V s for p-GaN to 0.24 Ω · cm and 0.48 cm2/V s for p-SB with an In content of 15.2%. Temperature dependent Hall measurements were conducted to estimate the activation energy of the p-SB template. The p-SB with the In content of ∼15.2% is estimated to have an activation energy of 29 meV. These heavily doped p-SB templates have comparable material qualities to that of GaN. The atomic force microscopy height retraces of p-SB films show device quality surface morphology, with root mean square roughness ranging from 2.53 to 4.84 nm. The current results can impact the performances of several nitride-based devices, such as laser diodes, LEDs, solar cells, and photodetectors.
MQW 的发射对底层 InGaN 模板中铟含量的依赖性：实验和建模结果
影响因子：
1.9
作者：
Abdelhamid, Mostafa;Routh, Evyn L;Bedair, S M
通讯作者：
Bedair, S M
通过 TEM 技术观察器件质量 InGaN 模板的松弛
影响因子：
4
作者：
Eldred, Tim B.;Abdelhamid, Mostafa;Reynolds, J. G.;El-Masry, N. A.;LeBeau, James M.;Bedair, S. M.
通讯作者：
Bedair, S. M.