Study on Material Removal Rate of CMP 6H-SiC Crystal Substrate (0001) C Surface Based on Abrasive Alumina (Al2O3)
Study on Material Removal Rate of CMP 6H-SiC Crystal Substrate (0001) C Surface Based on Abrasive Alumina (Al2O3)
复制标题
基于磨料氧化铝（Al2O3）的CMP 6H-SiC晶体基片（0001）C面材料去除率研究
DOI：
10.4028/www.scientific.net/amr.497.250
复制
发表时间：
2012-04
期刊：
影响因子：
--
通讯作者：
Liu Xinglong
中科院分区：
文献类型：
--
作者：
Su Jianxiu;Du Jiaxi;Liu Xinglong
碳化硅晶体衬底已广泛应用于微电子、光子学和新材料领域，如半导体照明、集成电路等。研究了化学机械抛光中抛光液的组成，如pH值、磨料粒度及其浓度、分散剂和氧化剂、抛光板和抛光件的转速以及抛光压力等因素对碳化硅晶体基片(0001)C表面化学机械抛光材料去除效率的影响。研究结果将为碳化硅晶体衬底化学机械抛光浆料的研制、工艺参数的优化和材料去除机理的研究提供参考。
SiC crystal substrate has been widely used in the area of microelectronics, photonics and new materials, such as semiconductor lighting, integrated circuits, and so on. In this paper, the influences of the polishing slurry composition, such as the pH value, the abrasive size and its concentration, the dispersant and the oxidants, the rotational speed of the polishing platen and the workpiece and the polishing pressure on the material removal rate (MRR) of SiC crystal substrate (0001) C surface based on the alumina abrasive in chemical mechanical polishing (CMP). This study results will provide the reference for developing the slurry, optimizing the process parameters and researching the material removal mechanism in CMP of SiC crystal substrate.
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影响因子：
2.1
作者：
Canhua Li;I. Bhat;Rongjun Wang;J. Seiler
通讯作者：
Canhua Li;I. Bhat;Rongjun Wang;J. Seiler
影响因子：
2.1
作者：
Li, CH;Bhat, IB;Seiler, J
通讯作者：
Seiler, J
DOI：
10.4028/www.scientific.net/msf.338-342.837
发表时间：
2000-05
期刊：
Materials Science Forum
影响因子：
--
作者：
W. Everson;D. Snyder;V. D. Heydemann
通讯作者：
W. Everson;D. Snyder;V. D. Heydemann
影响因子：
2.1
作者：
Nelson, CL;Mitchel, WC;Hengehold, RL
通讯作者：
Hengehold, RL