Ultraviolet electroluminescence from a n-ZnO film/p-GaN heterojunction under both forward and reverse bias
Ultraviolet electroluminescence from a n-ZnO film/p-GaN heterojunction under both forward and reverse bias
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n-ZnO 薄膜/p-GaN 异质结在正向和反向偏压下的紫外电致发光
DOI：
10.1039/c8tc04507k
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发表时间：
2018-11
影响因子：
6.4
通讯作者：
Shen Dezhen
中科院分区：
文献类型：
--
作者：
Ai Qiu;Liu Kewei;Ma Hongyu;Yang Jialin;Chen Xing;Li Binghui;Shen Dezhen
采用分子束外延技术在p-GaN薄膜上生长ZnO薄膜，形成异质结发光二极管（LED）。该器件在正向和反向偏压下均表现出较强的发光。通过比较电致发光和光致发光光谱，研究了不同发光峰的来源。当正向偏压施加到器件上时，可以观察到来自ZnO而不是GaN的在λ 376 nm处的强烈紫外发射，这与p-GaN的空穴迁移率比n-ZnO的电子迁移率大有关。在反向偏压下，当注入电流为10 mA时，器件在520 nm处出现宽发射，GaN在430 nm处出现宽发射，ZnO在376 nm处出现宽发射，界面在408 nm处出现弱发射。当注入反向电流增加到20 mA时，在376 nm处的EL发射显示出强度的急剧增加而没有峰偏移。从界面态和能带理论的角度讨论了异质结发光二极管的发光机理。我们的研究结果在这项工作中提供了一个创新的途径，氧化锌基紫外二极管的设计和开发。
ZnO film was fabricated on p-GaN film using the molecular beam epitaxy technique to form heterojunction light emitting diodes (LEDs). The devices exhibited strong light emission under both forward and reverse bias. The origin of different luminescence peaks has been investigated by comparing electroluminescence (EL) and photoluminescence spectra. When a forward bias is applied to the device, intense ultraviolet emission at ∼376 nm originating from ZnO rather than GaN can be observed, which is associated with the larger hole mobility of p-GaN than the electron mobility of n-ZnO. Under the reverse bias, the device shows broad emission at 520 nm originating from deep level-related recombination in ZnO, emission at 430 nm from GaN, 376 nm from ZnO and weak emission at 408 nm from the interface with a lower injection current of 10 mA. As the injection reverse current increases to 20 mA, the EL emission at 376 nm exhibits a dramatic increase in intensity without a peak shift. The emission mechanism of the heterojunction LED is discussed in terms of interface states and energy band theory. Our findings in this work provide an innovative path for the design and development of ZnO-based ultraviolet diodes.
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影响因子：
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作者：
J. Yamashita
通讯作者：
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影响因子：
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作者：
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通讯作者：
Wessels, BW
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影响因子：
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影响因子：
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作者：
Long H.;Gu J. H.;Wang H. N.;Yang C. Y.;Hou J.;Li S. Z.;Yang Y. Q.;Wang C. L.;Zhao L. L.;Zhong Z. Y.
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Zhong Z. Y.
影响因子：
3.1
作者：
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