Characterization of the first double-sided 3D radiation sensors fabricated at FBK on 6-inch silicon wafers
Characterization of the first double-sided 3D radiation sensors fabricated at FBK on 6-inch silicon wafers
复制标题
FBK 在 6 英寸硅晶圆上制造的首款双面 3D 辐射传感器的表征
DOI：
10.1088/1748-0221/10/12/c12009
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发表时间：
2015
影响因子：
1.3
通讯作者：
G. Betta
中科院分区：
文献类型：
--
作者：
D. Sultan;R. Mendicino;M. Boscardin;S. Ronchin;N. Zorzi;G. Betta
在为ATLAS Insertable B-Layer生产3D像素传感器之后，Fondazione Bruno Kessler（FBK）的制造工厂最近升级为加工6英寸晶圆。2014年，制造了一个测试批次，以检查与此升级相关的可能问题。在保持双面制造技术的同时，还研究了一些工艺改进。我们在这里报告的技术和设计的这一批，并提出了选定的结果，从传感器和测试结构的电气特性。值得注意的是，击穿电压在辐照前超过200 V，远高于早期产品，证明了针对高亮度LHC升级的未来产品在辐射硬度方面的稳健性。
Following 3D pixel sensor production for the ATLAS Insertable B-Layer, Fondazione Bruno Kessler (FBK) fabrication facility has recently been upgraded to process 6-inch wafers. In 2014, a test batch was fabricated to check for possible issues relevant to this upgrade. While maintaining a double-sided fabrication technology, some process modifications have been investigated. We report here on the technology and the design of this batch, and present selected results from the electrical characterization of sensors and test structures. Notably, the breakdown voltage is shown to exceed 200 V before irradiation, much higher than in earlier productions, demonstrating robustness in terms of radiation hardness for forthcoming productions aimed at High Luminosity LHC upgrades.
DOI：
10.1016/j.nima.2011.08.041
发表时间：
2011-12-11
影响因子：
1.4
作者：
Koehler, Michael;Bates, Richard;Preiss, Jens
通讯作者：
Preiss, Jens
DOI：
10.1016/j.nima.2012.07.058
发表时间：
2012-12-01
影响因子：
1.4
作者：
Da Via, Cinzia;Boscardin, Maurizio;Zorzi, Nicola
通讯作者：
Zorzi, Nicola