Incorporation of Carbon in Free-Standing HVPE-Grown GaN Substrates
Incorporation of Carbon in Free-Standing HVPE-Grown GaN Substrates
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在独立式 HVPE 生长的 GaN 衬底中掺入碳
DOI：
10.1007/s11664-019-07016-w
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发表时间：
2019
影响因子：
2.1
通讯作者：
M. Boćkowski
中科院分区：
文献类型：
--
作者：
M. Zvanut;Subash Paudel;E. Glaser;M. Iwinska;T. Sochacki;M. Boćkowski
碳掺杂是补偿GaN中无意施主和获得高频、大功率器件所必需的半绝缘衬底的一种可行的方法。在这项工作中，研究了毫米厚的自立式碳掺杂GaN的体材料性质和点缺陷，以了解碳掺杂的效果。随温度变化的霍尔测量表明，在6 × 1017 cm−3 C掺杂的样品中，在高达5 6 0°C的温度下具有高的电阻率和低的载流子浓度，电子顺磁共振表明碳起到了补偿缺陷的作用。光致发光与光电子顺磁共振相一致，表明补偿中心是CN；然而，当碳浓度大于5 × 1017 cm−3时，可能会形成额外的缺陷，这些缺陷可能会限制补偿。
Carbon doping is a viable approach for compensating the unintentional donors in GaN and achieving semi-insulating substrates necessary for high-frequency, high-power devices. In this work, bulk material properties and point defects are studied in mm-thick free-standing carbon-doped GaN to understand the efficacy of the carbon dopant. Temperature-dependent Hall measurements reveal high resistivity and low carrier concentrations at temperatures as high as 560°C in a 6 × 1017 cm−3 C-doped sample, and electron paramagnetic resonance (EPR) indicates that carbon acts as the compensating defect. Photoluminescence, in agreement with photo-EPR, suggests that the compensating center is CN; however, additional defects, which possibly limit compensation, are formed at carbon concentrations greater than 5 × 1017 cm−3.
影响因子：
4.9
作者：
M. Uren;M. Caesar;S. Karboyan;P. Moens;P. Vanmeerbeek;Martin Kuball
通讯作者：
M. Uren;M. Caesar;S. Karboyan;P. Moens;P. Vanmeerbeek;Martin Kuball
影响因子：
4
作者：
Uren, Michael J.;Caesar, Markus;Kuball, Martin
通讯作者：
Kuball, Martin