Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides.
Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides.
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超宽带隙氮化物中非平衡有效p型掺杂的量子工程。
DOI：
10.1038/s41377-021-00503-y
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发表时间：
2021-03-31
期刊：
影响因子：
--
通讯作者：
Li D
中科院分区：
文献类型：
--
作者：
Jiang K;Sun X;Shi Z;Zang H;Ben J;Deng HX;Li D
超宽带隙氮化物具有可调谐的带隙宽度、较高的击穿场强和能量密度、良好的化学稳定性和热稳定性，在微电子和光电子领域具有巨大的潜力。然而，低的p掺杂效率严重阻碍了它们的应用，这归因于低价带最大值产生的超高受主激活能。本文提出了一种价带调制方式，并采用量子工程掺杂方法，将GaN量子点埋入氮化物基质中，形成新的带边，从而调谐掺杂激活能，从而获得高效的p型超宽带隙氮化物。利用非平衡掺杂技术，成功地制备了Al含量为60%的AlGaN：Mg量子工程掺杂材料。室温下，镁的激活能降低到21 meV左右，空穴浓度达到1018 cm−3以上。在Al含量为50%和70%的AlGaN中也获得了相似的激活能，表明量子工程掺杂方法具有普适性。此外，制作了深紫外光发光二极管，性能的改善进一步证明了该方法的有效性和优点。随着量子材料生长技术的发展，这种方法将得到广泛应用，并极大地促进超宽带隙半导体器件的发展。
Ultra-wide band-gap nitrides have huge potential in micro- and optoelectronics due to their tunable wide band-gap, high breakdown field and energy density, excellent chemical and thermal stability. However, their application has been severely hindered by the low p-doping efficiency, which is ascribed to the ultrahigh acceptor activation energy originated from the low valance band maximum. Here, a valance band modulation mode is proposed and a quantum engineering doping method is conducted to achieve high-efficient p-type ultra-wide band-gap nitrides, in which GaN quantum-dots are buried in nitride matrix to produce a new band edge and thus to tune the dopant activation energy. By non-equilibrium doping techniques, quantum engineering doped AlGaN:Mg with Al content of 60% is successfully fabricated. The Mg activation energy has been reduced to about 21 meV, and the hole concentration reaches higher than 1018 cm−3 at room temperature. Also, similar activation energies are obtained in AlGaN with other Al contents such as 50% and 70%, indicating the universality of the quantum engineering doping method. Moreover, deep-ultraviolet light-emission diodes are fabricated and the improved performance further demonstrates the validity and merit of the method. With the quantum material growth techniques developing, this method would be prevalently available and tremendously stimulate the promotion of ultra-wide band-gap semiconductor-based devices.
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