Photoemission characteristics of graded band-gap AlGaAs/GaAs wire photocathode
Photoemission characteristics of graded band-gap AlGaAs/GaAs wire photocathode
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梯度带隙AlGaAs/GaAs线光电阴极的光电特性
DOI：
10.1016/j.optcom.2016.01.031
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发表时间：
2016-05
影响因子：
2.4
通讯作者：
Chang, Benkang
中科院分区：
文献类型：
--
作者：
Deng, Wenjuan;Chen, Zhaoping;Zhao, Wenjun;Chang, Benkang
A photoemission model of graded band-gap AlGaAs/GaAs wire NEA photocathode is developed based on the numerical solution of coupled Poisson and continuity equations. The emission current density and integral sensitivity of graded band-gap AlGaAs/GaAs wire photocathode as a function of incident light wavelength, Al composition range, and wire length, are simulated according to the model. The simulation results show that, compared with the GaAs (Al composition 0) wire photocathode, the peak integral sensitivities for the photocathodes with wire width of 1 µm and linearly graded Al composition ranges of 0 to 0.1, 0.2, 0.3, and 0.4 increase by 29.5%, 38.5%, 42.1%, and 43.8%, respectively. The optimum wire lengths are 4.7, 5.9, 7.1, and 8.4 µm for the wire photocathodes with Al composition ranges of 0 to 0.1, 0.2, 0.3, and 0.4, respectively.
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影响因子：
2.4
作者：
Wenjuan Deng;Daoli Zhang;J. Zou;Xincun Peng;Weilu Wang;Yijun Zhang;Benkang Chang
通讯作者：
Wenjuan Deng;Daoli Zhang;J. Zou;Xincun Peng;Weilu Wang;Yijun Zhang;Benkang Chang
影响因子：
2.4
作者：
Yijun Zhang;Jun Niu;J. Zou;Xinlong Chen;Yuan Xu;Benkang Chang;F. Shi
通讯作者：
Yijun Zhang;Jun Niu;J. Zou;Xinlong Chen;Yuan Xu;Benkang Chang;F. Shi
影响因子：
3.2
作者：
ASPNES, DE;KELSO, SM;BHAT, R
通讯作者：
BHAT, R
影响因子：
4
作者：
Zhi Liu;F. Machuca;P. Pianetta;W. Spicer;R. Pease
通讯作者：
Zhi Liu;F. Machuca;P. Pianetta;W. Spicer;R. Pease
影响因子：
3.8
作者：
Li, Zhenhua;Wang, Jian;Lee, Sungjoo
通讯作者：
Lee, Sungjoo