Behavior of indium alloying with Cu2ZnSn(S,Se)4 and its effect on performances of Cu2ZnSn(S,Se)4-based solar cell
Behavior of indium alloying with Cu2ZnSn(S,Se)4 and its effect on performances of Cu2ZnSn(S,Se)4-based solar cell
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铟与Cu2ZnSn(S,Se)(4)合金化行为及其对Cu2ZnSn(S,Se)(4)基太阳能电池性能的影响
DOI：
10.1016/j.jallcom.2018.07.129
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发表时间：
2018-10
影响因子：
6.2
通讯作者：
Haifeng Zhao
中科院分区：
文献类型：
--
作者：
Zhenyu Xiao;Hongmei Luan;Ruijian Liu;Bin Yao;Yongfeng Li;Zhanhui Ding;Gang Yang;Rui Deng;Gang Wang;Zhenzhong Zhang;Ligong Zhang;Haifeng Zhao
采用溶液法将In与铜黄锡矿Cu 2 ZnSn（S，Se）4（CZTSSe（In））合金化，制备了In含量为0 ~ 19.34at%的铜黄锡矿Cu 2 ZnSn（S，Se）4薄膜（CZTSSe（In））中In的P型固溶体。结果表明，In在0- 1.15at%范围内取代Sn形成InSn受主缺陷，Cu和Sn形成InCu-InSn施主复合物或少量Zn形成InZn施主缺陷，In含量在6.34- 19.34at%范围内取代Sn形成InSn受主缺陷。CZTSSe（In）的空穴浓度在0- 1.15at%范围内随In含量的增加而增加，在6.34- 19.34at%范围内随In含量的增加而降低。CZTSSe（In）的带隙从CZTSSe的1.040 eV增加到具有19.34 at% In的CZTSSe（In）的1.083 eV。以In含量为0.67at%和12.27at%的CZTSSe（In）和CZTSSe（In）为吸收剂，制备了三种具有传统结构的太阳能电池，其功率转换效率（PCE）分别为3.52，3.24，1.67%。结果表明，带隙对开路电压的影响与空穴浓度相比很小。空穴浓度的增加使Voc增大，但使光生电流密度（Jph）和反向饱和电流密度（J 0）减小。In合金化对CZTSSe（In）基太阳电池PCE的影响取决于空穴浓度对Voc、Jph和J 0的影响。讨论了In合金化对CZTSSe性能的影响机理及CZTSSe基太阳能电池的性能。
P-type solid solutions of indium (In) in kesterite Cu2ZnSn(S,Se)4films (CZTSSe(In)) with In contents of 0–19.34 at% were prepared by In alloying with the kesterite Cu2ZnSn(S,Se)4(CZTSSe) through a solution approach. It is found that the In substitutes for Sn to form InSnacceptor defect in the CZTSSe(In) in the In content range of 0–1.15 at%, and for Cu and Sn to form InCu-InSndonor complex or/and for a small number of Zn to form InZndonor defects in the range of 6.34–19.34 at%. The hole concentration of the CZTSSe(In) increases with increasing In content in the range of 0–1.15 at%, but decreases in the range of 6.34–19.34 at%. The bandgap of the CZTSSe(In) increases from 1.040 eV for CZTSSe to 1.083 eV for CZTSSe(In) with 19.34 at% In. Three solar cells with traditional structure and power conversion efficiency (PCE) of 3.52, 3.24 and 1.67% were fabricated by using the CZTSSe and CZTSSe(In) with In content of 0.67 and 12.27 at% as absorbers, respectively. It is found that the effect of the bandgap on the open-circuit voltage (Voc) is little compared to the hole concentration. The increased hole concentration enhances the Vocbut decreases the photogenerated current density (Jph) and reverse saturation current density (J0). The effect of In alloying on the PCE of the CZTSSe(In)-based solar cell is determined by the effects of the hole concentration on Voc, Jphand J0. The influence mechanism of the In alloying on the properties of the CZTSSe and performance of the CZTSSe-based solar cell are discussed in the present work.
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影响因子：
6.2
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DOI：
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发表时间：
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期刊：
Advanced science (Weinheim, Baden-Wurttemberg, Germany)
影响因子：
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影响因子：
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