Explore of warpage origination in WLP and processing influence factors by experiment and theoretical modeling
Explore of warpage origination in WLP and processing influence factors by experiment and theoretical modeling
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通过实验和理论建模探索WLP中翘曲的起源和加工影响因素
DOI：
10.1007/s10854-016-5285-8
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发表时间：
2016-07
期刊：
影响因子：
--
通讯作者：
Le Luo
中科院分区：
文献类型：
--
作者：
Heng Li;Le Luo
厚铜膜在晶片级封装中有着广泛的应用，在随后的热循环过程中产生的应力变化以及引起的晶圆翘曲可能会对产品的成品率产生重大影响，需要进行研究。通过晶圆翘曲测量，原位研究了厚度为5lm的镀态铜膜在热循环过程中的应力演化行为。显微组织分析表明，热循环过程中的晶粒长大在现有工作中是可以忽略的，但却发生了剧烈的原子扩散，表明变形机制以扩散蠕变为主，针对不同温度下主导的扩散机制不同，提出了与温度线性相关的等效扩散能，并由此推导出基于等效扩散能的应力演化模型。与常规工作相比，该模型具有较少的拟合参数，与试验结果吻合较好。
Thick Cu films are widely used in wafer level packaging, and the stress evolution during subsequent thermal cycling as well as the induced wafer warpage may make a significant impact on product yielding and needs to be investigated. The stress evolution behavior of 5 lm thick as-electroplated Cu films during thermal cycling are in situ investigated by wafer warpage measurement. It is revealed by microstructure analyses that the grain growth during thermal cycling is ignorable in current work, but dramatic atomic diffusion has occurred, suggesting the deformation mechanism is dominated by diffusional creep..As the dominant diffusion mechanism differs at different temperatures, an equivalent diffusional energy that has a linearly correlation to temperature is proposed, and consequently a stress evolution model based on the equivalent diffusional energy is deduced. Compared with conventional work, the current model has fewer fitted parameters, and shows better agreement with the experiment results
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DOI：
10.1007/s10854-015-3790-9
发表时间：
2015
期刊：
Journal of Materials Science: Materials in Electronics
影响因子：
--
作者：
E. Suhir;R. Ghaffarian;J. Nicolics
通讯作者：
E. Suhir;R. Ghaffarian;J. Nicolics
影响因子：
2.6
作者：
T. Bhandakkar;Y. Wei;H. Gao
通讯作者：
T. Bhandakkar;Y. Wei;H. Gao
DOI：
10.1016/j.msea.2015.09.082
发表时间：
2015-11
影响因子：
6.4
作者：
D. R. Economy;M. Cordill;E. A. Payzant;M. S. Kennedy
通讯作者：
D. R. Economy;M. Cordill;E. A. Payzant;M. S. Kennedy
影响因子：
2.7
作者：
M. Thouless;J. Gupta;J.M.E. Harper
通讯作者：
M. Thouless;J. Gupta;J.M.E. Harper
影响因子：
2.7
作者：
P. Flinn
通讯作者：
P. Flinn