Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates
Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates
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GaAs (001) 邻位衬底上生长的 GaSb 和 InSb 外延层的位错分布
DOI：
10.1063/1.3115450
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发表时间：
2009-05
影响因子：
3.2
通讯作者：
中科院分区：
文献类型：
--
作者：
GaSb and InSb epilayers grown on GaAs (001) vicinal substrates misoriented toward (111) plane were studied using high resolution x-ray diffraction. The results show that GaSb and InSb epilayers take on positive crystallographic tilt, and the asymmetric distribution of 60 degrees misfit dislocations in {111} glide planes have an effect on the tilt. In addition, the vicinal substrate influences the distribution of the threading dislocations in {111} glide planes, and the density of dislocation in the (111) plane is higher than in the ((1) over bar(1) over bar1) plane. A model was proposed to interpret the distribution of full width at half maximum, which can help us understand the formation and glide process of the dislocations. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3115450]
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影响因子：
3.7
作者：
Kaganer, VM;Brandt, O;Ploog, KH
通讯作者：
Ploog, KH
DOI：
10.1016/0921-5107(90)90027-9
发表时间：
1990-12
影响因子：
3.6
作者：
X. Zhang;A. Staton-bevan;D. W. Pashley
通讯作者：
X. Zhang;A. Staton-bevan;D. W. Pashley
影响因子：
1.8
作者：
B. Nosho;B. R. Bennett;E. Aifer;M. Goldenberg
通讯作者：
B. Nosho;B. R. Bennett;E. Aifer;M. Goldenberg
影响因子：
1.8
作者：
AYERS, JE;GHANDHI, SK;SCHOWALTER, LJ
通讯作者：
SCHOWALTER, LJ
影响因子：
3.7
作者：
Kaganer, VM;Kohler, R;Jenichen, B
通讯作者：
Jenichen, B