Achieving 21.4% Efficient CdSeTe/CdTe Solar Cells Using Highly Resistive Intrinsic ZnO Buffer Layers
Achieving 21.4% Efficient CdSeTe/CdTe Solar Cells Using Highly Resistive Intrinsic ZnO Buffer Layers
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实现%2021.4%%20Efficient%20CdSeTe/CdTe%20Solar%20Cells%20Using%20Highly%20Resistive%20Intrinsic%20ZnO%20Buffer%20Layers
DOI：
10.1002/adfm.202312528
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发表时间：
2023
影响因子：
19
通讯作者：
Kujovic L
中科院分区：
文献类型：
--
作者：
Kujovic L
In this study, the use of intrinsic and highly insulating ZnO buffer layers to achieve high conversion efficiencies in CdSeTe/CdTe solar cells is reported. The buffer layers are deposited on commercial SnO2:F coated soda‐lime glass substrates and then fabricated into arsenic‐doped CdSeTe/CdTe devices using an absorber and back contact deposited by First Solar. The ZnO thickness is varied from 30 to 200 nm. The devices incorporating a 50 nm ZnO buffer layer achieved an efficiency of 21.23% without an anti‐reflection coating. An improved efficiency of 21.44% is obtained on a substrate with a multilayer anti‐reflection coating deposited prior to device fabrication. The highly efficient ZnO based devices are stable and do not develop anomalousJ‐Vbehavior following environmental tests. High resolution microstructural analysis reveals the formation of a high‐quality ZnO/CdSeTe interface. Unusually, chlorine is not detected as a discrete layer at the interface, these observations point to a high‐quality interface. The extrapolation ofVocto 0 K indicates that interface recombination dominates, suggesting that further improvement is possible. Using device modeling, an attempt is made to understand how this type of device performs so well.
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影响因子：
6.9
作者：
Krasikov, Dmitry;Guo, Da;Sankin, Igor
通讯作者：
Sankin, Igor
影响因子：
6.4
作者：
Li, Deng-Bing;Song, Zhaoning;Yano, Yanfa
通讯作者：
Yano, Yanfa
影响因子：
6.9
作者：
Kartopu, G.;Oklobia, O.;Irvine, S. J. C.
通讯作者：
Irvine, S. J. C.
薄膜 CdTe 太阳能电池宽带减反射涂层的性能和耐久性
DOI：
10.1116/1.4973909
发表时间：
2017
期刊：
Vacuum, Surfaces, and Films
影响因子：
--
作者：
Womack G
通讯作者：
Womack G
影响因子：
6.9
作者：
M. Scarpulla;B. McCandless;A. Phillips;Yanfa Yan;M. Heben;C. Wolden;G. Xiong;W. Metzger;Dan Mao;D. Krasikov;I. Sankin;S. Grover;A. Munshi;W. Sampath;J. Sites;Alexandra M. Bothwell;D. Albin;M. Reese;A. Romeo;M. Nardone;R. Klie;J. M. Walls;T. Fiducia;A. Abbas;S. M. Hayes
通讯作者：
M. Scarpulla;B. McCandless;A. Phillips;Yanfa Yan;M. Heben;C. Wolden;G. Xiong;W. Metzger;Dan Mao;D. Krasikov;I. Sankin;S. Grover;A. Munshi;W. Sampath;J. Sites;Alexandra M. Bothwell;D. Albin;M. Reese;A. Romeo;M. Nardone;R. Klie;J. M. Walls;T. Fiducia;A. Abbas;S. M. Hayes