A dual mode electronic synapse based on layered SnSe films fabricated by pulsed laser deposition.
A dual mode electronic synapse based on layered SnSe films fabricated by pulsed laser deposition.
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基于脉冲激光沉积制备的层状 SnSe 薄膜的双模电子突触
DOI：
10.1039/c9na00447e
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发表时间：
2020-03-17
影响因子：
4.7
通讯作者：
中科院分区：
文献类型：
--
作者：
人工突触，如记忆性电子突触，由于其在神经形态计算中的潜力而引起了全世界的关注，这可能会极大地减少计算机的体积和能量消耗。据报道，层状二维材料的引入提高了记忆电子突触的性能。然而，用可扩展的方法制备大面积层状二维薄膜仍然是一个挑战，这极大地限制了二维材料的工业应用潜力。在这项工作中，利用可扩展脉冲激光沉积（PLD）方法制备了大面积分层的SnSe薄膜，该薄膜用作双模式记忆电子突触的功能层。这种基于snse的记忆性电子突触既实现了电阻逐渐变化的长期记忆行为（模式1），也实现了电阻突然降低的短期记忆行为（模式2）。模式1和模式2之间的切换可以通过一系列电压扫描和编程脉冲来实现。锡空位的形成和恢复被认为是诱发短期记忆阻行为的原因，而银丝形成/断裂和肖特基势垒调制的共同作用可能是长期记忆阻行为的起因。DFT计算进一步说明了Ag原子和Sn空位如何在SnSe层中扩散并形成细丝。用PLD方法制备的层状硫族记忆电阻器成功模拟了突触功能，表明其在未来神经形态计算机中的应用潜力。
An artificial synapse, such as a memristive electronic synapse, has caught world-wide attention due to its potential in neuromorphic computing, which may tremendously reduce computer volume and energy consumption. The introduction of layered two-dimensional materials has been reported to enhance the performance of the memristive electronic synapse. However, it is still a challenge to fabricate large-area layered two-dimensional films by scalable methods, which has greatly limited the industrial application potential of two-dimensional materials. In this work, a scalable pulsed laser deposition (PLD) method has been utilized to fabricate large-area layered SnSe films, which are used as the functional layers of the memristive electronic synapse with dual modes. Both long-term memristive behaviour with gradually changed resistance (Mode 1) and short-term memristive behavior with abruptly reduced resistance (Mode 2) have been achieved in this SnSe-based memristive electronic synapse. The switching between Mode 1 and Mode 2 can be realized by a series of voltage sweeping and programmed pulses. The formation and recovery of Sn vacancies were believed to induce the short-term memristive behaviour, and the joint action of Ag filament formation/rupture and Schottky barrier modulation can be the origin of long-term memristive behaviour. DFT calculations were performed to further illustrate how Ag atoms and Sn vacancies diffuse through the SnSe layer and form filaments. The successful emulation of synaptic functions by the layered chalcogenide memristor fabricated by the PLD method suggests the application potential in future neuromorphic computers.
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影响因子：
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