Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors
Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors
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HfO2 基铁电场效应晶体管中鲁棒稳定的中间存储状态
DOI：
10.1016/j.jmat.2021.11.003
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发表时间：
2021-11
影响因子：
9.4
通讯作者：
Zhou Yichun
中科院分区：
文献类型：
--
作者：
Chen Liu;Binjian Zeng;Dai Siwei;Shuaizhi Zheng;Peng Qiangxiang;Jinjuan Xian;Jianfeng Gao;Jie Zhao;Jincheng Zhang;Liao Min;Zhou Yichun
Multilevel ferroelectric field−effect transistors (FeFETs) integrated with HfO 2 −based ferroelectric thin films demonstrate tremendous potential in high−speed massive data storage and neuromorphic computing applications. However, few works have focused on the stability of the multiple memory states in the HfO 2 −based FeFETs. Here we firstly report the write/read disturb effects on the multiple memory states in the Hf 0.5 Zr 0.5 O 2 (HZO)−based FeFETs. The multiple memory states in HZO−based FeFETs do not show obvious degradation with the write and read disturb cycles. Moreover, the retention characteristics of the intermediate memory states in HZO−based FeFETs with unsaturated ferroelectric polarizations are better than that of the memory state with saturated ferroelectric polarization. Through the deep analysis of the operation principle of in HZO−based FeFETs, we speculate that the better retention properties of intermediate memory states are determined by the less ferroelectric polarization degradation and the weaker ferroelectric polarization shielding. The experimental and theoretical evidences confirm that the long−term stability of the intermediate memory states in HZO−based FeFETs are as robust as that of the saturated memory state, laying a solid foundation for their practical applications. • The multilevel memory performances of the HfO 2 -based FeFETs are investigated. • The multiple memory states in the HfO 2 -based FeFETs show superior retention properties. • The retention mechanism of the intermediate memory states in HZO-based FeFETs.
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影响因子：
1.7
作者：
Chen, An
通讯作者：
Chen, An
影响因子：
38.3
作者：
Wong, H. -S. Philip;Salahuddin, Sayeef
通讯作者：
Salahuddin, Sayeef
具有 ZrO2 种子层的基于 Hf0.5Zr0.5O2 的 FeFET 的存储窗口和耐久性改进，具有快速电压脉冲测量的特点
影响因子：
--
作者：
Xiao, Wenwu;Liu, Chen;Zhou, Yichun
通讯作者：
Zhou, Yichun
影响因子：
9.5
作者：
Lee, Kyoungjun;Lee, Hyun-Jae;Chae, Seung Chul
通讯作者：
Chae, Seung Chul
影响因子：
64.8
作者：
Cheema, Suraj S.;Kwon, Daewoong;Salahuddin, Sayeef
通讯作者：
Salahuddin, Sayeef