A comparative study of thermal characteristics of GaN-based VCSELs with three different typical structures
A comparative study of thermal characteristics of GaN-based VCSELs with three different typical structures
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三种不同典型结构GaN基VCSEL热特性对比研究
DOI：
10.1088/1361-6641/aa90aa
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发表时间：
2017
影响因子：
1.9
通讯作者：
J. Zhang
中科院分区：
文献类型：
--
作者：
Y. Mei;R. B. Xu;H. Xu;L. Y. Ying;Z. W. Zheng;B. P. Zhang;M. Li;J. Zhang
对三种典型结构的GaN基垂直腔面发射激光器（VCSEL）的热特性进行了理论和实验研究。基于稳态准三维圆柱体模型的仿真结果表明，热阻（Rth）受腔长、梅萨尺寸以及底部分布布拉格反射器（DBR）尺寸的影响，具体情况还取决于不同的结构。在不同的器件中，由一个氮化物底部DBR和另一个介质顶部DBR形成混合腔的GaN VCSEL具有较低的Rth，同时它受到外延底部DBR材料的强烈影响。影响双介质DBR VCSEL散热的主要因素是底部介质DBR和介质电流限制层。为了验证模拟结果，GaN基VCSEL键合在铜板上制作。测量了该器件的Rth，结果与模拟结果吻合较好.本文的工作为深入了解GaN基垂直腔面发射激光器的热特性、优化结构设计和提高器件性能提供了理论依据。
Thermal characteristics of GaN-based vertical cavity surface emitting lasers (VCSELs) with three typical structures were investigated both theoretically and experimentally. The simulation results based on a steady state quasi three-dimensional cylindrical model show that the thermal resistance (R th) is affected by cavity length, mesa size, as well as the bottom distributed Bragg reflector (DBR) size, and the detail further depends on different structures. Among different devices, GaN VCSEL with a hybrid cavity formed by one nitride bottom DBR and another dielectric top DBR is featured with lower R th, which is meanwhile affected strongly by the materials of the epitaxial bottom DBR. The main issues affecting the thermal dissipation in VCSELs with double dielectric DBRs are the bottom dielectric DBR and the dielectric current-confinement layer. To validate the simulation results, GaN-based VCSEL bonded on a copper plate was fabricated. R th of this device was measured and the results agreed well with the simulation. This work provides a better understanding of the thermal characteristics of GaN-based VCSELs and is useful in optimizing the structure design and improving the device performance.
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影响因子：
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