Influence of La2O3 doping on the characteristics of ZnO linear resistors

Influence of La2O3 doping on the characteristics of ZnO linear resistors
复制标题

La2O3掺杂对ZnO线性电阻特性的影响

DOI:
10.1016/j.jallcom.2021.158855
复制
发表时间:
2021-02
影响因子:
6.2
通讯作者:
Wenbin Cao
Wenbin Cao
中科院分区:
材料科学2区
文献类型:
--
作者:
Jianke Liu;Jiaojiao Chen;Ruiting Zhang;Jinfeng Su;Yinan Qiao;Xin Xie;Wenbin Cao

文献摘要

参考文献

相似文献

ZnO linear resistors have anticipated application prospect in electrical and electronic industry, but the study of La2O3doping is still poor. In this paper, the ZnO linear resistors doped with Al2O3, MgO, SiO2and La2O3were prepared by the conventional solid-state sintering method, and the effects of La2O3doping on the microstructure and comprehensive electrical properties were studied. Structural and morphological characteristics of the samples were investigated by scanning electron microscope (SEM) and X-ray diffraction (XRD) respectively. The property of resistivity-frequency reveals that the samples could be applied in high-frequency electric field. The dielectric property indicates Maxwell-Wagner interfacial polarization exists in the matrixes. With La2O3content of 1 wt%, ZnO linear resistors have the best linear performance: the grain size is relatively uniform, the resistance temperature coefficientαTis − 6.63 × 10−3/°C, and the nonlinear coefficientαis 1.09. The comprehensive analysis of the influence of La2O3doping on the electrical properties is of important significance for preparing ZnO linear resistors with excellent electrical properties.
DOI: 10.1016/j.jeurceramsoc.2007.02.176
发表时间: 2007
影响因子: 5.7
作者:
S. Bernik;N. Daneu
通讯作者: S. Bernik;N. Daneu
DOI: 10.1007/s10854-013-1647-7
发表时间: 2014-02
期刊: Journal of Materials Science: Materials in Electronics
影响因子: --
作者:
Jianfeng Zhu;Jingjing Wang;Yong Zhou;Fen Wang
通讯作者: Jianfeng Zhu;Jingjing Wang;Yong Zhou;Fen Wang
DOI: 10.1016/j.scriptamat.2006.11.020
发表时间: 2007-03
期刊: Scripta Materialia
影响因子: 6
作者:
I. Gul;F. Amin;A. Abbasi;M. Anis-Ur-Rehman;A. Maqsood
通讯作者: I. Gul;F. Amin;A. Abbasi;M. Anis-Ur-Rehman;A. Maqsood
DOI: 10.1109/61.4244
发表时间: 1988
影响因子: 4.4
作者:
S. Shirakawa;S. Owada;N. Iimura;K. Kurita;T. Yamazaki;K. Shindo;Y. Yamauchi
通讯作者: S. Shirakawa;S. Owada;N. Iimura;K. Kurita;T. Yamazaki;K. Shindo;Y. Yamauchi
DOI: 10.1016/j.jallcom.2018.03.289
发表时间: 2018-06
影响因子: 6.2
作者:
Chen Minge;Liu Qian;Zhu Jianfeng;Wang Fen
通讯作者: Wang Fen