Neuromorphic device based on silicon nanosheets.
Neuromorphic device based on silicon nanosheets.
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基于硅纳米片的神经形态装置
DOI：
10.1038/s41467-022-32884-y
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发表时间：
2022-09-05
影响因子：
16.6
通讯作者：
Yang, Deren
中科院分区：
文献类型：
--
作者：
Wang, Chenhao;Xu, Xinyi;Pi, Xiaodong;Butala, Mark D.;Huang, Wen;Yin, Lei;Peng, Wenbing;Ali, Munir;Bodepudi, Srikrishna Chanakya;Qiao, Xvsheng;Xu, Yang;Sun, Wei;Yang, Deren
硅因其高丰度、大产量以及与成熟的CMOS加工行业的完美兼容性而至关重要。最近，人工堆叠的层状2D结构通过微调电子器件的性能而获得了极大的关注。本文介绍了基于硅纳米片的神经形态器件，这些硅纳米片经过化学剥离和表面改性，能够自组装成分层堆叠结构。设备功能可以在单极忆阻器和可行的可重置突触设备之间切换。该器件的存储功能是基于部分氧化的SiNS叠层中的电荷存储，随后由Au-Si肖特基界面处的电场激活的放电，如在实验和理论手段中所验证的。这项工作进一步启发了优雅的神经形态计算模型，用于数字识别和噪声过滤。最终，它将硅-最成熟的半导体-带回到下一代计算的前沿。硅是地球上丰富的元素，与成熟的CMOS加工行业完美兼容。在这里，Sun等人展示了基于硅纳米片堆叠的多功能神经形态设备，将硅作为神经形态设备的潜在材料带回。
Silicon is vital for its high abundance, vast production, and perfect compatibility with the well-established CMOS processing industry. Recently, artificially stacked layered 2D structures have gained tremendous attention via fine-tuning properties for electronic devices. This article presents neuromorphic devices based on silicon nanosheets that are chemically exfoliated and surface-modified, enabling self-assembly into hierarchical stacking structures. The device functionality can be switched between a unipolar memristor and a feasibly reset-able synaptic device. The memory function of the device is based on the charge storage in the partially oxidized SiNS stacks followed by the discharge activated by the electric field at the Au-Si Schottky interface, as verified in both experimental and theoretical means. This work further inspired elegant neuromorphic computation models for digit recognition and noise filtration. Ultimately, it brings silicon - the most established semiconductor - back to the forefront for next-generation computations. Silicon is an abundant element on earth and is perfectly compatible with the well-established CMOS processing industry. Here, Sun et al. demonstrate multifunctional neuromorphic devices based on silicon nanosheet stacks, bringing silicon back as a potential material for neuromorphic devices.
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影响因子：
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