Nitrogenated holey two-dimensional structures.
Nitrogenated holey two-dimensional structures.
复制标题
DOI：
10.1038/ncomms7486
复制
发表时间：
2015-03-06
影响因子：
16.6
通讯作者：
Baek, Jong-Beom
中科院分区：
文献类型：
--
作者：
Mahmood, Javeed;Lee, Eun Kwang;Jung, Minbok;Shin, Dongbin;Jeon, In-Yup;Jung, Sun-Min;Choi, Hyun-Jung;Seo, Jeong-Min;Bae, Seo-Yoon;Sohn, So-Dam;Park, Noejung;Oh, Joon Hak;Shin, Hyung-Joon;Baek, Jong-Beom
最近对石墨烯的研究引起了人们对新型二维有序晶体的极大兴趣，这种晶体是通过包含碳以外的元素来打开带隙的。设计具有合适带隙的新型多功能二维材料已成为一个重要的挑战。在这里，我们报道了一个层状二维网络结构，它具有均匀分布的空穴和氮原子，并且在其基面上具有C2N化学计量。二维结构可以通过简单的湿化学反应有效地合成，并通过各种表征技术（包括扫描隧道显微镜）得到证实。此外，使用该材料制备的场效应晶体管器件的开/关比为107，计算带隙和实验带隙分别约为1.70 eV和1.96 eV。由于制备方法简单，且具有固溶可加工性的优点，C2N-h2D晶体具有实际应用潜力。目前人们对含有杂原子的二维类石墨烯材料很感兴趣。在这里，作者合成了一种具有C2N化学计量学的可溶液处理的、含有均匀分布的空穴和氮原子的多孔二维网络，并用它来制造场效应晶体管。
Recent graphene research has triggered enormous interest in new two-dimensional ordered crystals constructed by the inclusion of elements other than carbon for bandgap opening. The design of new multifunctional two-dimensional materials with proper bandgap has become an important challenge. Here we report a layered two-dimensional network structure that possesses evenly distributed holes and nitrogen atoms and a C2N stoichiometry in its basal plane. The two-dimensional structure can be efficiently synthesized via a simple wet-chemical reaction and confirmed with various characterization techniques, including scanning tunnelling microscopy. Furthermore, a field-effect transistor device fabricated using the material exhibits an on/off ratio of 107, with calculated and experimental bandgaps of approximately 1.70 and 1.96 eV, respectively. In view of the simplicity of the production method and the advantages of the solution processability, the C2N-h2D crystal has potential for use in practical applications. There is currently interest in two-dimensional graphene-like materials incorporating heteroatoms. Here, the authors synthesize a solution-processable, holey two-dimensional network with C2N stoichiometry containing evenly distributed holes and nitrogen atoms, and use it to fabricate a field effect transistor.
登录
查看更多内容
影响因子：
56.9
作者：
Wang, Xinran;Li, Xiaolin;Dai, Hongjie
通讯作者：
Dai, Hongjie
影响因子：
16.6
作者：
Guo J;Xu Y;Jin S;Chen L;Kaji T;Honsho Y;Addicoat MA;Kim J;Saeki A;Ihee H;Seki S;Irle S;Hiramoto M;Gao J;Jiang D
通讯作者：
Jiang D
影响因子：
10.8
作者：
Merchant, Christopher A.;Healy, Ken;Drndic, Marija
通讯作者：
Drndic, Marija
影响因子：
15
作者：
Jeong, Hae-Kyung;Lee, Yun Pyo;Lee, Young Hee
通讯作者：
Lee, Young Hee
DOI：
10.1073/pnas.0502848102
发表时间：
2005-07-26
影响因子：
11.1
作者：
Novoselov, KS;Jiang, D;Geim, AK
通讯作者：
Geim, AK