Nucleation of self-growth dislocations on growth front during the solidification process of silicon
Nucleation of self-growth dislocations on growth front during the solidification process of silicon
复制标题
硅凝固过程中生长前沿自生长位错的成核
DOI：
10.1063/1.5088125
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发表时间：
2019-04
影响因子：
3.2
通讯作者：
Zhou Lang
中科院分区：
文献类型：
--
作者：
Zhou Naigen;Sui Xiaoxiao;He Xiajie;Huang Shaowen;Zhou Lang
对硅凝固过程中位错形核过程进行了分子动力学模拟。在硅的均匀形核和生长过程中，随着局部能量的降低，在晶粒生长前沿产生自生长位错。讨论了自生长位错的形核机制，其实质是粗糙界面中两个孪晶堆积顺序不同的原子岛的失配。温度影响界面形貌，进而影响自生长位错的产生。此外，在晶体生长过程中，有些位错在晶粒中沿沿着孪晶界运动，甚至被晶界吸收。在硅的均匀形核和生长过程中，随着局域能量的降低，在晶粒生长前沿产生自生长位错。讨论了自生长位错的形核机制，其实质是粗糙界面中两个孪晶堆积顺序不同的原子岛的失配。温度影响界面形貌，进而影响自生长位错的产生。此外，在晶体生长过程中，有些位错沿着孪晶界运动，甚至被晶界吸收。
Molecular dynamics simulation of the nucleation of dislocations in the solidification of silicon has been carried out. The self-growth dislocations could be generated on growth front of grains with the reduction of local energy during homogenous nucleation and growth of silicon. The nucleation mechanism of the self-growth dislocation has been discussed; the essence of it is the mismatch of two atomic islands with different twin stacking sequences in the rough interface. Temperature could affect the interface morphology and then the generation of self-growth dislocation. In addition, some dislocations move along twin boundaries in the grain and even are absorbed by grain boundaries in the course of crystal growth.Molecular dynamics simulation of the nucleation of dislocations in the solidification of silicon has been carried out. The self-growth dislocations could be generated on growth front of grains with the reduction of local energy during homogenous nucleation and growth of silicon. The nucleation mechanism of the self-growth dislocation has been discussed; the essence of it is the mismatch of two atomic islands with different twin stacking sequences in the rough interface. Temperature could affect the interface morphology and then the generation of self-growth dislocation. In addition, some dislocations move along twin boundaries in the grain and even are absorbed by grain boundaries in the course of crystal growth.
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影响因子：
9.4
作者：
T. Ervik;M. Kivambe;G. Stokkan;B. Ryningen;O. Lohne
通讯作者：
T. Ervik;M. Kivambe;G. Stokkan;B. Ryningen;O. Lohne
DOI：
10.1002/pip.2708
发表时间：
2016-12
期刊：
Progress in Photovoltaics: Research and Applications
影响因子：
--
作者：
K. Jiptner;Y. Miyamura;H. Harada;B. Gao;K. Kakimoto;T. Sekiguchi
通讯作者：
K. Jiptner;Y. Miyamura;H. Harada;B. Gao;K. Kakimoto;T. Sekiguchi
影响因子：
8.6
作者：
J. F. Justo;M. Koning;W. Cai;V. Bulatov
通讯作者：
J. F. Justo;M. Koning;W. Cai;V. Bulatov
影响因子：
2.8
作者：
Byoung-Min Lee;H. Baik;B. Seong;S. Munetoh;T. Motooka
通讯作者：
Byoung-Min Lee;H. Baik;B. Seong;S. Munetoh;T. Motooka
DOI：
10.1080/14786445108561310
发表时间：
1951-08
期刊：
Philosophical Magazine Series 1
影响因子：
--
作者：
F. Frank
通讯作者：
F. Frank