High temperature stability of Hf-based gate dielectric stacks with rare-earth oxide layers for threshold voltage control
High temperature stability of Hf-based gate dielectric stacks with rare-earth oxide layers for threshold voltage control
复制标题
具有稀土氧化物层的铪基栅极电介质叠层的高温稳定性，用于阈值电压控制
DOI：
10.1063/1.2901036
复制
发表时间：
2008
影响因子：
4
通讯作者：
S. Stemmer
中科院分区：
文献类型：
--
作者：
J. Lebeau;J. Jur;D. Lichtenwalner;H. S. Craft;J. Maria;A. Kingon;Dmitri O. Klenov;J. Cagnon;S. Stemmer
用扫描电子显微镜技术研究了硅衬底DyOx/HfSiON和HoOx/HfSiON栅介质层的热稳定性，并与它们的电学特性进行了关联。观察到稀土元素与HfSiON的混合，但没有扩散到界面SiO_2中。快速热退火(1000℃)对稀土元素的浓度分布几乎没有影响，但导致界面SiO_2层变薄，稀土氧化层厚度相应增加。这些反应可以用稀土氧化层的缺氧性和相对于二氧化硅更高的热力学稳定性来解释。相对于没有DyOx或Hoox的对照样品，观察到了负的平带电压漂移。讨论了观察到的微结构变化引起平带电压负漂移的机理。
The thermal stability of DyOx∕HfSiON and HoOx∕HfSiON gate dielectric stacks on silicon was studied by scanning transmission electron microscopy techniques and correlated with their electrical characteristics. Intermixing of the rare-earth elements with the HfSiON was observed, but there was no diffusion into the interfacial SiO2. Rapid thermal annealing (1000°C) produced little detectable change in the concentration profile of the rare-earth elements but caused thinning of the interfacial SiO2 layer along with a corresponding increase in the rare-earth oxide layer thickness. These reactions could be explained with oxygen deficiency in the rare-earth oxide layer and its greater thermodynamic stability relative to SiO2. Negative flat band voltage shifts were observed relative to a control sample with no DyOx or HoOx. Mechanisms by which the observed microstructure changes could give rise to negative flatband voltage shifts are discussed.
DOI：
10.1143/jjap.46.7251
发表时间：
2007-11-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
影响因子：
--
作者：
Yamamoto, Yoshiki;Kita, Koji;Toriumi, Akira
通讯作者：
Toriumi, Akira
影响因子：
4
作者：
Yoshiki Yamamoto;K. Kita;K. Kyuno;A. Toriumi
通讯作者：
Yoshiki Yamamoto;K. Kita;K. Kyuno;A. Toriumi