Micro-/macro-responses of a ferroelectric single crystal with domain pinning and depinning by dislocations
Micro-/macro-responses of a ferroelectric single crystal with domain pinning and depinning by dislocations
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具有位错畴钉扎和脱钉作用的铁电单晶的微观/宏观响应
DOI：
10.1063/1.4826532
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发表时间：
2013-10
影响因子：
3.2
通讯作者：
Zhang, T. Y.
中科院分区：
文献类型：
--
作者：
Wu, H. H.;Wang, J.;Cao, S. G.;Chen, L. Q.;Zhang, T. Y.
采用位错阵列进行相场模拟，研究了具有域钉钉和脱孔现象的铁电单晶的微观结构特征和宏观响应。结果表明，由于位错阵列的存在，在小振幅的外加磁场下，极化方向与外加磁场反平行的畴可以存在。在接下来的宏观切换过程中，残馀畴仅通过畴壁运动充当预先存在的核。当外加电场幅值超过某一临界值时，钉住畴将发生失稳，这与位错阵列中的位错间距高度相关。在偏置电场作用下，由于钉钉和脱钉效应，极化与电场之间会产生不对称的磁滞回线。
Phase field simulations are conducted to investigate the micro-structural signature and the macro-response of a ferroelectric single crystal with domain pinning and depinning phenomena by dislocation arrays. It is shown that due to the presence of the dislocation arrays, a domain with polarizations antiparallel to an applied field can survive under the small amplitude of applied field. The residual domain serves as a pre-existing nucleus during the following macroscopic switching via only domain wall motion. The pinned domain will be depinned when the external electric field amplitude exceeds a critical value, which highly depends on the dislocation spacing in the dislocation array. Due to the pinning and depinning effect, an asymmetric hysteresis loop of polarization versus electric field might appear when a bias field is applied.
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影响因子：
4
作者：
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通讯作者：
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影响因子：
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