Interplay between Occupation Sites of (Co, Cu) Codopants and Crystal Orientation of ZnO Matrix
Interplay between Occupation Sites of (Co, Cu) Codopants and Crystal Orientation of ZnO Matrix
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(Co, Cu) 共掺杂剂的占据位点与 ZnO 基体晶体取向之间的相互作用
DOI：
10.1021/jp408928q
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发表时间：
2013-11
影响因子：
3.7
通讯作者：
Wei, Shiqiang
中科院分区：
文献类型：
--
作者：
Pan, Zhiyun;Yan, Wensheng;Sun, Zhihu;Wei, Shiqiang
元素共掺杂是改变半导体结构和电子性质的有效方法。利用X射线衍射和X射线吸收精细结构谱，我们发现Co和Cu共掺杂在ZnO薄膜中的空间占位可以通过不同温度下脉冲激光沉积制备的基体的晶体取向来调节。在低于300 °C的沉积温度下，ZnO基体沿着[201]择优取向生长，Co掺杂剂的替代掺入和金属Cu纳米团簇的形成。将生长温度提高到300 °C或更高驱动ZnO膜向c轴[002]择优取向转变。因此，Cu原子聚集成较大的fcc结构的Cu纳米晶体，其吸引部分Co掺杂剂以作为金属簇沉淀出来。讨论了Co/Cu共掺杂物在ZnO薄膜中的占位位置与薄膜生长取向的关系。
Elemental codoping has been an effective way to modify the structural and electronic properties of semiconductors. By use of X-ray diffraction and X-ray absorption fine structure spectroscopy, we show that the spatial occupations of Co and Cu codopants in ZnO thin films could be regulated by the crystal orientation of the matrix prepared by pulsed laser deposition at different temperatures. At deposition temperatures lower than 300 °C, the ZnO matrix was grown along the [201] preferential orientation, with the substitutional incorporation of Co dopants and formation of metallic Cu nanoclusters. Increasing the growth temperature to 300 °C or higher drives a transform of the ZnO film to the c-axial [002] preferred orientation. Consequently, the Cu atoms aggregate into larger fcc-structured Cu nanocrystals that attract part of the Co dopants to precipitate out as metallic clusters. The relation between the growth orientation of ZnO thin films and the occupation positions of Co/Cu codopants is discussed in te...
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