Uniform doping of graphene close to the Dirac point by polymer-assisted assembly of molecular dopants.
Uniform doping of graphene close to the Dirac point by polymer-assisted assembly of molecular dopants.
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通过聚合物辅助的分子掺杂剂组装，将石墨烯均匀地掺杂了地石墨烯。
DOI：
10.1038/s41467-018-06352-5
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发表时间：
2018-09-27
影响因子：
16.6
通讯作者：
Lara-Avila S
中科院分区：
文献类型：
--
作者：
He H;Kim KH;Danilov A;Montemurro D;Yu L;Park YW;Lombardi F;Bauch T;Moth-Poulsen K;Iakimov T;Yakimova R;Malmberg P;Müller C;Kubatkin S;Lara-Avila S
通过在晶格中掺入掺杂剂来调整二维（2D）材料的载流子密度是一项具有挑战性的任务。另一种有吸引力的替代方法是通过在二维晶体上吸附分子的表面转移掺杂，这可以导致有序的分子阵列。然而，在超高真空条件下（UHV），这种系统在环境条件下往往不稳定。本研究表明，通过在聚甲基丙烯酸甲基酯中掺入2,3,5,6-四氟-四氰-喹啉-二甲烷（F4TCNQ）的自旋涂层沉积，在sic上实现了空气稳定的外延石墨烯掺杂，这是通过石墨烯-聚合物界面上掺杂剂的自发积累和电荷转移配合物的形成进行的，该配合物在低温下产生低无序、电荷中性、大面积的石墨烯，载流子迁移率为70,000 cm2 V−1 s−1。在聚合物基质的辅助下，在二维材料上组装掺杂剂，在环境条件下通过旋转涂层晶圆级衬底来证明，为扩展二维材料的功能开辟了一条可扩展的技术路线。在石墨烯晶格中加入掺杂剂以调整其电子特性是一项具有挑战性的任务。在这里，作者报告了一种在环境条件下通过F4TCNQ聚合物的自旋涂层沉积在SiC上涂覆大面积外延石墨烯的策略。
Tuning the charge carrier density of two-dimensional (2D) materials by incorporating dopants into the crystal lattice is a challenging task. An attractive alternative is the surface transfer doping by adsorption of molecules on 2D crystals, which can lead to ordered molecular arrays. However, such systems, demonstrated in ultra-high vacuum conditions (UHV), are often unstable in ambient conditions. Here we show that air-stable doping of epitaxial graphene on SiC—achieved by spin-coating deposition of 2,3,5,6-tetrafluoro-tetracyano-quino-dimethane (F4TCNQ) incorporated in poly(methyl-methacrylate)—proceeds via the spontaneous accumulation of dopants at the graphene-polymer interface and by the formation of a charge-transfer complex that yields low-disorder, charge-neutral, large-area graphene with carrier mobilities ~70 000 cm2 V−1 s−1 at cryogenic temperatures. The assembly of dopants on 2D materials assisted by a polymer matrix, demonstrated by spin-coating wafer-scale substrates in ambient conditions, opens up a scalable technological route toward expanding the functionality of 2D materials. Incorporating dopants in the graphene lattice to tune its electronic properties is a challenging task. Here, the authors report a strategy to dope epitaxial large-area graphene on SiC by means of spin-coating deposition of F4TCNQ polymers in ambient conditions.
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影响因子：
17.1
作者：
Tsai HZ;Omrani AA;Coh S;Oh H;Wickenburg S;Son YW;Wong D;Riss A;Jung HS;Nguyen GD;Rodgers GF;Aikawa AS;Taniguchi T;Watanabe K;Zettl A;Louie SG;Lu J;Cohen ML;Crommie MF
通讯作者：
Crommie MF
影响因子：
56.9
作者：
Lin, Y. -M.;Dimitrakopoulos, C.;Avouris, Ph.
通讯作者：
Avouris, Ph.
影响因子：
5.5
作者：
Janssen, T. J. B. M.;Rozhko, S.;Yakimova, R.
通讯作者：
Yakimova, R.
影响因子：
8.6
作者：
Knap, Michael;Sau, Jay D.;Demler, Eugene
通讯作者：
Demler, Eugene
影响因子：
10.8
作者：
Mayorov, Alexander S.;Elias, Daniel C.;Gorbachev, Roman V.
通讯作者：
Gorbachev, Roman V.