Synthesis of high quality two-dimensional materials via chemical vapor deposition.
Synthesis of high quality two-dimensional materials via chemical vapor deposition.
复制标题
通过化学气相沉积合成高质量二维材料
DOI：
10.1039/c5sc01941a
复制
发表时间：
2015-12-01
期刊：
影响因子：
8.4
通讯作者：
Chang H
中科院分区：
文献类型：
--
作者：
Yu J;Li J;Zhang W;Chang H
化学气相沉积合成高质量的石墨烯、氮化硼和过渡金属二卤化物等二维材料为大规模应用提供了新的机遇。二维(2D)材料因其独特的性质和巨大的应用潜力而备受关注。高质量、高效率的二维材料的可控合成是其大规模应用的关键。化学气相沉积(CVD)已成为合成2D材料最重要、最可靠的技术之一。从这一角度出发，简要介绍了石墨烯、氮化硼和过渡金属二卤化物(TMDs)这三种典型的二维材料的化学气相沉积生长的最新进展。较详细地讨论了大面积制备、单晶生长和一些机理上的见解。最后，我们对CVD生长2D材料所面临的挑战作了简要的评论。
The synthesis of high quality two-dimensional materials such as graphene, BN, and transition metal dichalcogenides by CVD provides a new opportunity for large scale applications. Two-dimensional (2D) materials have attracted much attention due to their unique properties and great potential in various applications. Controllable synthesis of 2D materials with high quality and high efficiency is essential for their large scale applications. Chemical vapor deposition (CVD) has been one of the most important and reliable techniques for the synthesis of 2D materials. In this perspective, the recent advances in the CVD growth of three typical types of two-dimensional materials, graphene, boron nitride and transition metal dichalcogenides (TMDs), are briefly introduced. Large area preparation, single crystal growth and some mechanistic insight are discussed with details. Finally we give a brief comment on the challenges of CVD growth of 2D materials.
登录
查看更多内容
Ru(0001) 上外延单层石墨烯的周期调制电子特性
影响因子：
3.7
作者：
Feng, Wei;Lei, Shulai;Zhao, Aidi
通讯作者：
Zhao, Aidi
影响因子：
56.9
作者：
Lee, Jae-Hyun;Lee, Eun Kyung;Whang, Dongmok
通讯作者：
Whang, Dongmok
影响因子：
4
作者：
Kang, Jun;Tongay, Sefaattin;Wu, Junqiao
通讯作者：
Wu, Junqiao
影响因子：
17.1
作者：
Gan, Lin;Luo, Zhengtang
通讯作者：
Luo, Zhengtang
影响因子：
4
作者：
Laskar, Masihhur R.;Ma, Lu;Rajan, Siddharth
通讯作者：
Rajan, Siddharth