Probing material absorption and optical nonlinearity of integrated photonic materials.
Probing material absorption and optical nonlinearity of integrated photonic materials.
复制标题
DOI：
10.1038/s41467-022-30966-5
复制
发表时间：
2022-06-09
影响因子：
16.6
通讯作者：
中科院分区：
文献类型：
--
作者：
具有高品质（Q）因子的光学微谐振器对于广泛的集成光子器件是必不可少的。稳定的努力已经指向跨各种平台增加微谐振器Q因子。随着成功地减少微制造工艺相关的光损耗作为Q的限制，最终可达到的Q，仅由组成微谐振器材料吸收确定，已经成为焦点。在这里，我们报告的材料限制的Q因子在几个光子材料平台的测量。高Q值微谐振器由SiO2、Si3N4、Al0.2Ga0.8As和Ta2O5薄膜制成。利用腔增强光热光谱技术，测定了材料极限Q值。该方法同时测量每种材料中的克尔非线性，并揭示了材料非线性和最终Q如何在光子材料中以互补的方式变化。除了指导四种材料平台的微谐振器设计和材料开发外，研究结果还有助于确定未来光子集成系统的性能极限。光学吸收和非线性折射率是微梳等器件的重要性能驱动因素。在这里，作者使用共振增强非线性光谱来表征一些集成光子材料的吸收极限和非线性指数。
Optical microresonators with high quality (Q) factors are essential to a wide range of integrated photonic devices. Steady efforts have been directed towards increasing microresonator Q factors across a variety of platforms. With success in reducing microfabrication process-related optical loss as a limitation of Q, the ultimate attainable Q, as determined solely by the constituent microresonator material absorption, has come into focus. Here, we report measurements of the material-limited Q factors in several photonic material platforms. High-Q microresonators are fabricated from thin films of SiO2, Si3N4, Al0.2Ga0.8As, and Ta2O5. By using cavity-enhanced photothermal spectroscopy, the material-limited Q is determined. The method simultaneously measures the Kerr nonlinearity in each material and reveals how material nonlinearity and ultimate Q vary in a complementary fashion across photonic materials. Besides guiding microresonator design and material development in four material platforms, the results help establish performance limits in future photonic integrated systems. Optical absorption and nonlinear index are important performance drivers in devices like microcombs. Here the authors use resonance-enhanced nonlinear spectroscopy to characterize absorption limits and nonlinear index for some integrated photonic materials.
登录
查看更多内容
Q 因子高于 10(8) 的片上集成铌酸锂微盘谐振器中的宽带高效非线性光学过程
影响因子：
3.3
作者：
Gao, Renhong;Zhang, Haisu;Cheng, Ya
通讯作者：
Cheng, Ya
影响因子：
10.4
作者：
Guha, Biswarup;Marsault, Felix;Favero, Ivan
通讯作者：
Favero, Ivan
影响因子：
3.8
作者：
Ikeda, Kazuhiro;Saperstein, Robert E.;Fainman, Yeshaiahu
通讯作者：
Fainman, Yeshaiahu
影响因子：
3.6
作者：
An, K;Sones, BA;Feld, MS
通讯作者：
Feld, MS
影响因子：
3.8
作者：
Ettoumi, W.;Petit, Y.;Wolf, J. -P.
通讯作者：
Wolf, J. -P.