Influence of Film Coating Thickness on Secondary Electron Emission Characteristics of Non-Evaporable Getter Ti-Hf-V-Zr Coated Open-Cell Copper Foam Substrates.
Influence of Film Coating Thickness on Secondary Electron Emission Characteristics of Non-Evaporable Getter Ti-Hf-V-Zr Coated Open-Cell Copper Foam Substrates.
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薄膜涂层厚度对非蒸散型吸气剂Ti-Hf-V-Zr涂层开孔泡沫铜基板二次电子发射特性的影响
DOI：
10.3390/ma15062185
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发表时间：
2022-03-16
期刊：
影响因子：
--
通讯作者：
Wang S
中科院分区：
文献类型：
--
作者：
Zhang J;Wang J;Gao Y;Hu Y;Xie Y;You Z;Wang S
低二次电子产额真空材料的应用是消除电子云的有效方法之一。本研究在不同孔径的开孔泡沫铜上沉积了Ti-Hf-V-Zr非蒸散吸气剂（NEG）薄膜，以抑制电子的微碰撞效应。此外，首次研究了Ti-Hf-V-Zr NEG薄膜涂层开孔泡沫铜基板的二次电子发射（SEE）特性与薄膜厚度的关系。结果表明，所有未涂覆和涂覆NEG的泡沫多孔铜基板均实现了较低的SEY（<1.2），与传统铜板相比降低了至少40%，并且具有1.34 μ m厚的NEG涂层的泡沫多孔铜具有最低的SEY。此外，还系统地分析了不同孔径的泡沫多孔铜的表面化学和形貌结构特性，以及有无Ti-Hf-V-Zr NEG膜。
The application of vacuum materials with low secondary electron yield (SEY) is one of the effective methods to mitigate the electron cloud (EC). In this study, the Ti-Hf-V-Zr non-evaporable getter (NEG) film was deposited on open-cell copper foams with different pore sizes for the suppression of electron multipacting effects. Besides, the influence of the film thickness on the secondary electron emission (SEE) characteristics of Ti-Hf-V-Zr NEG film-coated open-cell copper foam substrates was investigated for the first time. The results highlighted that all uncoated and NEG-coated foamed porous copper substrates achieved a low SEY (<1.2), which reduced at least 40% compared to the traditional copper plates, and the foamed porous coppers with 1.34-μm-thick NEG coating had the lowest SEY. Moreover, the surface chemistry and the morphological and structural properties of foamed porous coppers of different pore sizes with and without Ti-Hf-V-Zr NEG films were systematically analyzed.
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影响因子：
2.1
作者：
Chiggiato, P.;Pinto, P. Costa
通讯作者：
Pinto, P. Costa
影响因子：
1.6
作者：
Cimino, Roberto;Demma, Theo
通讯作者：
Demma, Theo
影响因子：
2.1
作者：
Li, Chien-Cheng;Huang, Jow-Lay;Lii, Ding-Fwu
通讯作者：
Lii, Ding-Fwu
影响因子：
6.2
作者：
Nivas, J. J. J.;Valadan, M.;Masullo, M. R.
通讯作者：
Masullo, M. R.
影响因子：
4
作者：
Malyshev, O. B.;Valizadeh, R.;Hannah, A.
通讯作者：
Hannah, A.