Measurement of tritium in tungsten deposition layer by imaging plate technique after exposure to gaseous tritium
Measurement of tritium in tungsten deposition layer by imaging plate technique after exposure to gaseous tritium
复制标题
暴露于气态氚后通过成像板技术测量钨沉积层中的氚
DOI：
10.1016/j.fusengdes.2017.04.076
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发表时间：
2017
影响因子：
1.7
通讯作者：
S. Fukada
中科院分区：
文献类型：
--
作者：
M. Noguchi;K. Katayama;Y. Torikaia;N. Ashikawa;A. Taguchi;S. Fukada
了解聚变反应堆等离子体材料对氚的解吸行为，对于探讨有效回收容器内组件氚的方法具有重要意义。然而，氢同位素在W沉积层中的基本行为尚不完全清楚。在本研究中，将氢等离子溅射形成的特征钨沉积层暴露在300℃或500℃的气态氚中，并通过成像板技术研究真空加热对氚的解吸行为。为了比较，裸钨衬底在相同条件下暴露于气态氚。沉积层中氚的初始活度远高于裸基底。在氚暴露过程中，不同温度的钨沉积层对氚的脱附行为不同。在500℃下加热1 h，在300℃下暴露于氚的层中97.5%的氚被解吸。另一方面，在500℃下加热2 h，在500℃下暴露于氚的层中，只有44.6%的氚被解吸。为了从W沉积层和W衬底中回收大部分氚，需要在700°C以上加热。
It is important to understand tritium desorption behavior from plasma-facing materials of a fusion reactor in order to discuss effective tritium recovery method from in-vessel components. However, basic behavior of hydrogen isotopes in W deposition layer is not understood completely. In this study, characterized tungsten deposition layer formed by hydrogen plasma sputtering was exposed to gaseous tritium at 300 °C or 500 °C and tritium desorption behavior by vacuum heating was investigated by the imaging plate technique. For comparison, bare tungsten substrates were exposed to gaseous tritium in the same condition. Initial tritium activity in the deposition layer was much higher than that in the bare substrate. Tritium desorption behavior from tungsten deposition layer was different by the temperature of the layer during tritium exposure process. By heating at 500 °C for 1 h, 97.5% of tritium was desorbed from the layer exposed to tritium at 300 °C. On the other hand, by heating at 500 °C for 2 h, only 44.6% of tritium was desorbed from the layer exposed to tritium at 500 °C. To recover most tritium from W deposition layer and W substrate, heating at above 700 °C is required.
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DOI：
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