Rapid Growth of Nanocrystalline Diamond on Single Crystal Diamond for Studies on Materials under Extreme Conditions.
Rapid Growth of Nanocrystalline Diamond on Single Crystal Diamond for Studies on Materials under Extreme Conditions.
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纳米晶钻在单晶钻石上快速生长，用于在极端条件下研究材料的研究。
DOI：
10.1038/s41598-018-19915-9
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发表时间：
2018-01-23
影响因子：
4.6
通讯作者：
Vohra YK
中科院分区：
文献类型：
--
作者：
Moore SL;Samudrala GK;Catledge SA;Vohra YK
研究了在（100）取向单晶金刚石（SCD）顶砧表面生长的空间定域纳米金刚石（NCD）微顶砧的早期成核形貌，并将其应用于材料高压研究。使用微波等离子体化学气相沉积（MPCVD）在SCD上生长NCD，时间间隔为1-15分钟。利用扫描电子显微镜（SEM）和拉曼光谱对早期膜的形态进行了表征，并与生长数小时的膜进行了比较。NCD在SCD上的快速成核和生长无需任何基质表面的预生长种子。采用同步x射线衍射在金刚石砧池中测量了生长在SCD上的NCD金刚石微砧在钨样品上产生0.5兆帕（TPa）的静压。超高压减压后的原子力显微镜（AFM）分析表明，NCD阶段的分离发生在SCD的主体上，而不是在界面上，这表明纳米晶与单晶金刚石之间的粘合强度显著。
Early stage nucleation morphologies of spatially localized nanocrystalline diamond (NCD) micro-anvils grown on (100)-oriented single crystal diamond (SCD) anvil surfaces were analyzed and investigated for applications in high pressure studies on materials. NCD was grown on SCD using Microwave Plasma Chemical Vapor Deposition (MPCVD) for brief time intervals ranging from 1–15 minutes. Early stage film morphologies were characterized using scanning electron microscopy (SEM) and Raman spectroscopy and were compared to films grown for several hours. Rapid nucleation and growth of NCD on SCD is demonstrated without any pre-growth seeding of the substrate surface. As grown NCD diamond micro-anvils on SCD were used to generate static pressure of 0.5 Terapascal (TPa) on a tungsten sample as measured by synchrotron x-ray diffraction in a diamond anvil cell. Atomic force microscopy (AFM) analysis after decompression from ultrahigh pressures showed that the detachment of the NCD stage occurred in the bulk of the SCD and not at the interface, suggesting significant adhesive bond strength between nanocrystalline and single crystal diamond.
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影响因子：
64.8
作者：
Dubrovinsky, L.;Dubrovinskaia, N.;Abrikosov, I. A.
通讯作者：
Abrikosov, I. A.
影响因子：
4
作者：
Velisavljevic, N;MacMinn, KM;Weir, ST
通讯作者：
Weir, ST
影响因子：
4.1
作者：
Arnault, J. C.;Saada, S.;Osawa, E.
通讯作者：
Osawa, E.
DOI：
10.1098/rsta.2004.1452
发表时间：
2004-11-15
影响因子：
5
作者：
Ferrari, AC;Robertson, J
通讯作者：
Robertson, J
影响因子：
4
作者：
SAMLENSKI, R;HAUG, C;KOIDL, P
通讯作者：
KOIDL, P