Single-crystalline GePb alloys formed by rapid thermal annealing-induced epitaxy
Single-crystalline GePb alloys formed by rapid thermal annealing-induced epitaxy
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快速热退火诱导外延形成的单晶GePb合金
DOI：
10.1088/1361-6463/ab7c06
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发表时间：
2020-04
期刊：
影响因子：
--
通讯作者：
Ma Yubo
中科院分区：
文献类型：
--
作者：
Yang Jiayin;Hu Huiyong;Miao Yuanhao;Wang Bin;Wang Wei;Su Han;Ma Yubo
通过在Ge中注入Pb，然后在N2气氛下快速热退火，成功制备了单晶GePb合金。采用高分辨率x射线衍射和高分辨率透射电镜测定了GePb合金的高结晶度和20 nm左右的厚度。在5 × 5 um扫描区域内，植入GePb样品的均方根值为1.25 nm，表明其表面相当光滑。经400℃退火后，选定区域的电子衍射图表明，合金首次形成单晶薄膜。根据x射线光电子能谱分析结果，该样品的Pb组成约为0.23%。该值与二次离子质谱的测量结果一致。此外，通过温度相关的霍尔测量，发现GePb/Ge样品的迁移率增强，这表明GePb合金具有成为未来单片光电子集成应用中有前途的高迁移率通道材料的巨大潜力。
Single-crystalline GePb alloys have been successfully achieved by implanting Pb into Ge, followed by rapid thermal annealing under N2 atmosphere. The high crystallinity and the thickness of around 20 nm of the GePb alloys was determined by high-resolution x-ray diffraction and high-resolution transmission electron microscopy. The root-mean-square value of the as-implanted GePb sample is evaluated to be 1.25 nm in the 5 × 5 um scan area, which indicates a rather smooth surface. After being annealed at 400 °C, the result of a selected area electron diffraction pattern suggested that a single-crystalline alloy film was formed for the first time. The Pb composition of this sample is approximately 0.23% according to the x-ray photoelectron spectroscopy results. This value corresponds with the measurement result of the secondary ion mass spectroscopy. In addition, mobility enhancement in GePb/Ge samples has been identified by temperature-dependent Hall measurement, which indicates GePb alloys have great potential to be a promising high-mobility channel material for future monolithic optoelectronics integration application.
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影响因子：
0.7
作者：
A. Kalyadin;N. Sobolev;A. Strel'chuk;P. Aruev;V. V. Zabrodskiy-V.;E. I. Shek
通讯作者：
A. Kalyadin;N. Sobolev;A. Strel'chuk;P. Aruev;V. V. Zabrodskiy-V.;E. I. Shek
影响因子：
3.8
作者：
Thach Pham;Du, Wei;Yu, Shui-Qing
通讯作者：
Yu, Shui-Qing
影响因子：
3.8
作者：
Camacho-Aguilera, Rodolfo E.;Cai, Yan;Michel, Jurgen
通讯作者：
Michel, Jurgen
DOI：
10.4028/www.scientific.net/ssp.178-179.25
发表时间：
2011-08
期刊：
Solid State Phenomena
影响因子：
--
作者：
T. Arguirov;M. Kittler;M. Oehme;N. Abrosimov;E. Kasper;J. Schulze
通讯作者：
T. Arguirov;M. Kittler;M. Oehme;N. Abrosimov;E. Kasper;J. Schulze
影响因子：
1.1
作者：
Pham, T. N.;Du, W.;Yu, S. -Q.
通讯作者：
Yu, S. -Q.