Different I–V Behaviors and Leakage Current Mechanisms in AlGaN Solar-Blind Ultraviolet Avalanche Photodiodes
Different I–V Behaviors and Leakage Current Mechanisms in AlGaN Solar-Blind Ultraviolet Avalanche Photodiodes
复制标题
AlGaN 日盲紫外雪崩光电二极管中不同的 I–V 行为和漏电流机制
DOI：
10.1021/acsaelm.0c00415
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发表时间：
2020-08
影响因子：
4.7
通讯作者：
Youdou Zheng
中科院分区：
文献类型：
--
作者：
Zhenguang Shao;Hailin Yu;Yu-Shen Liu;Xifeng Yang;Dunjun Chen;Bin Liu;Hai Lu;Rong Zhang;Youdou Zheng
为了更好地理解宽禁带AlGaN材料中倍增增益与穿透位错之间的关系，研究了AlGaN日盲紫外雪崩光电二极管（APD）的不同I-V特性和漏电流机制。利用横截面透射电子显微镜（TEM）和第一性原理计算研究了螺旋位错的类型、位置、密度和电子结构。基于非局域带-带隧穿模型，模拟了不同类型位错的APD的I-V特性，发现雪崩区的4芯-边TD会引起电子从p-AlGaN的价带隧穿到i-AlGaN的导带，导致器件过早击穿，并且在高电场下倍增增益显著降低。高增益雪崩器件的暗电流主要是由开芯和全芯螺旋TD决定的。
The different current–voltage (I–V) behaviors and leakage current mechanisms of AlGaN solar-blind ultraviolet avalanche photodiodes (APDs) have been investigated to better understand the relationships between multiplication gain and threading dislocations (TDs) in wide band gap AlGaN materials. The cross-sectional transmission electron microscopy (TEM) and first-principles calculations were used to study the types, location, density, and electronic structures of threading dislocations. TheI–Vbehaviors of APDs for different types of dislocations were simulated based on the nonlocal band-to-band tunneling model; we found that 4-core-edge TDs in the avalanche region can give rise to electron tunneling from the valence band of p-AlGaN to the conduction band of i-AlGaN and results in a premature breakdown, and the multiplication gain were significantly reduced under high electric field. The dark current of avalanche devices with high gain were dominated by open core and full core screw TDs.
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影响因子：
5.8
作者：
Wei Zheng;Lemin Jia;Feng Huang
通讯作者：
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影响因子：
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作者：
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影响因子：
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通讯作者：
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通讯作者：
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影响因子：
64.8
作者：
Taniyasu, Y;Kasu, M;Makimoto, T
通讯作者：
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