Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite.
Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite.
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了解机械剥离石墨上 GaN 外延层的生长机制
DOI：
10.1186/s11671-018-2546-x
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发表时间：
2018-04-27
影响因子：
--
通讯作者：
Jiang H
中科院分区：
文献类型：
--
作者：
Li T;Liu C;Zhang Z;Yu B;Dong H;Jia W;Jia Z;Yu C;Gan L;Xu B;Jiang H
基于经典成核理论，详细解释了GaN外延层在机械膨胀石墨上的生长机理。通过O-等离子体处理可以增加石墨表面上的缺陷数量，导致石墨表面上的成核密度增加。元素Al的加入可以有效提高成核速率，促进致密成核层的形成和GaN外延层的横向生长。的成核层，退火层和外延层的表面形态，其特征在于通过场发射扫描电子显微镜，其中的表面形态的演变与3D到2D的生长机制相吻合。采用高分辨透射电子显微镜对GaN的微观结构进行了表征。快速傅里叶变换衍射图案表明，立方相（锌混合物结构）的GaN晶粒得到使用常规的GaN成核层，而六方相（纤锌矿结构）的GaN薄膜形成使用AlGaN成核层。我们的工作开辟了新的途径，使用高取向热解石墨作为衬底，以制造可转移的光电器件。
The growth mechanism of GaN epitaxial layers on mechanically exfoliated graphite is explained in detail based on classic nucleation theory. The number of defects on the graphite surface can be increased via O-plasma treatment, leading to increased nucleation density on the graphite surface. The addition of elemental Al can effectively improve the nucleation rate, which can promote the formation of dense nucleation layers and the lateral growth of GaN epitaxial layers. The surface morphologies of the nucleation layers, annealed layers and epitaxial layers were characterized by field-emission scanning electron microscopy, where the evolution of the surface morphology coincided with a 3D-to-2D growth mechanism. High-resolution transmission electron microscopy was used to characterize the microstructure of GaN. Fast Fourier transform diffraction patterns showed that cubic phase (zinc-blend structure) GaN grains were obtained using conventional GaN nucleation layers, while the hexagonal phase (wurtzite structure) GaN films were formed using AlGaN nucleation layers. Our work opens new avenues for using highly oriented pyrolytic graphite as a substrate to fabricate transferable optoelectronic devices.
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