Element specific spin and orbital moments of nanoscale CoFeB amorphous thin films on GaAs(100)
Element specific spin and orbital moments of nanoscale CoFeB amorphous thin films on GaAs(100)
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GaAs(100)上纳米级CoFeB非晶薄膜的元素比自旋和轨道矩
DOI：
10.1063/1.4962994
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发表时间：
2016-05
期刊：
影响因子：
1.6
通讯作者：
Xu, Yongbing
中科院分区：
文献类型：
--
作者：
You, Biao;Du, Jun;Zhang, Rong;Xu, Yongbing
在GaAs（100）上合成了CoFeB非晶薄膜，并用x射线磁圆二色性（XMCD）和透射电子显微镜（TEM）对其进行了研究。我们发现超薄非晶膜中Co和Fe的轨道磁矩与自旋磁矩的比值比块状Co和Fe的提高了300%以上。结果表明，在GaAs（100）上制备的超薄CoFeB薄膜中存在较大的单轴磁各向异性（UMA），与CoFeB中Co原子的自旋-轨道耦合增强有关。本工作提供了GaAs（100）衬底上CoFeB非晶膜中UMA与元素比自旋矩和轨道矩之间相关性的实验证据，这对自旋电子学应用具有重要意义。
CoFeB amorphous films have been synthesized on GaAs(100) and studied with X-ray magnetic circular dichroism (XMCD) and transmission electron microscopy (TEM). We have found that the ratios of the orbital to spin magnetic moments of both the Co and Fe in the ultrathin amorphous film have been enhanced by more than 300% compared with those of the bulk crystalline Co and Fe, and specifically a large orbital moment of 0.56 μB from the Co atoms has been observed and at the same time the spin moment of the Co atoms remains comparable to that of the bulk hcp Co. The results indicate that the large uniaxial magnetic anisotropy (UMA) observed in the ultrathin CoFeB film on GaAs(100) is related to the enhanced spin-orbital coupling of the Co atoms in the CoFeB. This work offers experimental evidences of the correlation between the UMA and the element specific spin and orbital moments in the CoFeB amorphous film on the GaAs(100) substrate, which is of significance for spintronics applications.
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影响因子：
3.2
作者：
F. Bianco;P. Bouchon;M. Sousa;G. Salis;S. Alvarado
通讯作者：
F. Bianco;P. Bouchon;M. Sousa;G. Salis;S. Alvarado
影响因子：
3.7
作者：
Yongbing Xu;D. Freeland;M. Tselepi;J. Bland
通讯作者：
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磁性氧化物和赫斯勒合金的混合自旋电子结构
影响因子：
2.1
作者：
通讯作者：
--
DOI：
10.1088/1742-6596/211/1/012030
发表时间：
2010-02
期刊：
Journal of Physics: Conference Series
影响因子：
--
作者：
I. Kowalik;G. Öhrwall;B. N. Jensen;R. Sankari;E. Wallén;U. Johansson;O. Karis;D. Arvanitis
通讯作者：
I. Kowalik;G. Öhrwall;B. N. Jensen;R. Sankari;E. Wallén;U. Johansson;O. Karis;D. Arvanitis
影响因子：
4
作者：
Djayaprawira, DD;Tsunekawa, K;Ando, K
通讯作者：
Ando, K