Hybrid Spintronic Structures With Magnetic Oxides and Heusler Alloys
Hybrid Spintronic Structures With Magnetic Oxides and Heusler Alloys
复制标题
磁性氧化物和赫斯勒合金的混合自旋电子结构
DOI：
10.1109/tmag.2008.2002188
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发表时间：
2008-12
影响因子：
2.1
通讯作者：
中科院分区：
文献类型：
--
作者：
混合自旋电子结构将半金属磁性氧化物和赫斯勒合金与其预测的高自旋极化相结合，对于开发具有高效自旋注入的第二代自旋电子学具有重要意义。我们在GaAs(100)上合成了外延磁性氧化物Fe 3O 4 ，发现Fe3O4的晶胞旋转了45度以匹配砷化镓GaAs。研究发现这些薄膜具有低至 3-4 nm 的类块矩和低矫顽力，表明具有高质量的磁界面。超薄膜的磁化磁滞回线由单轴磁各向异性控制。样品的动态响应显示出对所施加的场脉冲的严重阻尼的进动响应。在GaAs上的Co2MnGa Heusler合金体系中，我们发现厚度低至10 nm时磁矩降低，这可能是自旋发光二极管结构的自旋注入效率低于预期的原因。使用X射线磁圆二色性（XMCD）的元素特异性技术，发现自旋矩的减小源自Mn而不是Co原子，因此需要改进界面以提高该系统中的自旋注入效率。对Fe3O4/GaAs(100)和Fe3O4/MgO/GaAs(100)的I-V特性的进一步研究表明，Fe3O4基自旋电子结构具有明确的肖特基势垒或中等势垒高度的隧道势垒，这对于高效自旋注入是令人鼓舞的。
Hybrid spintronic structures, integrating half-metallic magnetic oxides and Heusler alloys with their predicted high spin polarization, are important for the development of second-generation spintronics with high-efficient spin injection. We have synthesized epitaxial magnetic oxide Fe 3O 4 on GaAs(100) and the unit cell of the Fe3O4 was found to be rotated by 45deg to match the gallium arsenide GaAs. The films were found to have a bulk-like moment down to 3-4 nm and a low coercivity indicating a high-quality magnetic interface. The magnetization hysteresis loops of the ultrathin films are controlled by uniaxial magnetic anisotropy. The dynamic response of the sample shows a heavily damped precessional response to the applied field pulses. In the Heusler alloy system of Co2MnGa on GaAs, we found that the magnetic moment was reduced for thicknesses down to 10 nm, which may account for the lower than expected spin-injection efficiency from the spin-light-emitting diode structures. Using the element-specific technique of X-ray magnetic circular dichroism (XMCD), the reduced spin moments were found to originate from the Mn rather than the Co atoms, and the improvement of the interface is thus needed to increase the spin injection efficiency in this system. Further studies of the I-V characteristics of Fe3O4/GaAs(100) and Fe3O4/MgO/GaAs(100) show that the Fe3 O4 -based spintronic structures have a well-defined Schottky or tunneling barrier of moderate barrier height, which is encouraging for high-efficient spin injection.
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影响因子：
3.2
作者：
L. Singh;Z. Barber;A. Kohn;A. Petford-Long;Y. Miyoshi;Y. Bugoslavsky;L. Cohen
通讯作者：
L. Singh;Z. Barber;A. Kohn;A. Petford-Long;Y. Miyoshi;Y. Bugoslavsky;L. Cohen
影响因子：
1.8
作者：
W. Roy;G. Borghs;J. Boeck
通讯作者：
W. Roy;G. Borghs;J. Boeck
影响因子：
4
作者：
E. Girgis;P. Bach;C. Rüster;C. Gould;G. Schmidt;L. Molenkamp
通讯作者：
E. Girgis;P. Bach;C. Rüster;C. Gould;G. Schmidt;L. Molenkamp
DOI：
10.1063/1.1925758
发表时间：
2005-04
期刊：
INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005.
影响因子：
--
作者：
S. Watts;C. Boothman;S. van Dijken;J. Coey
通讯作者：
S. Watts;C. Boothman;S. van Dijken;J. Coey
影响因子：
4
作者：
Á. Gali;T. Hornos;P. Deák;N. T. Son;E. Janzén;W. J. Choyke
通讯作者：
Á. Gali;T. Hornos;P. Deák;N. T. Son;E. Janzén;W. J. Choyke