Effects of Si-doping on magnetic properties of Ga1−xCrxN
Effects of Si-doping on magnetic properties of Ga1−xCrxN
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Si掺杂对Ga1-xCrxN磁性能的影响
DOI：
10.1016/j.jmmm.2014.09.021
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发表时间：
2015-01
影响因子：
2.7
通讯作者：
Chang Liu
中科院分区：
文献类型：
--
作者：
Zhongpo Zhou;Zongxian Yang;Chang Liu
采用分子束外延法制备了Si掺杂和未掺杂的Ga1−xCrxN薄膜。用x射线衍射、x射线光发射光谱、光致发光、光吸收光谱和磁测量对样品进行了研究。结果表明，在未掺杂的GaN中，Cr在取代Ga时以三价态为主，且Cr三维态出现在GaN的带隙内。在Si掺杂的样品中，化学势向上移动，并且Si掺杂提供的电子被捕获在Cr位点形成Cr2+。结果表明，Si掺杂提高了Ga1−xCrxN:Si样品的居里温度，降低了饱和磁化强度。用束缚磁极化子的渗透理论解释了Si掺杂对Ga1−xCrxN铁磁性的显著影响。
Ga1−xCrxN thin films with and without the Si doping have been prepared by molecular beam epitaxy. The samples have been investigated by X-ray diffraction, X-ray photoemission spectroscopy, photoluminescence, optical absorption spectra and magnetic measurements. It has been confirmed that for the undoped samples Cr in GaN is predominantly trivalent when substituting for Ga and that the Cr 3d state appears within the band gap of GaN. In Si doped specimens the upward shifts of the chemical potential are observed, and the electrons supplied by the Si doping are trapped at Cr sites forming Cr2+. As a result, the Si doping effects show an increase of the Curie temperature, and a reduction of the saturation magnetization in the Ga1−xCrxN:Si samples. The significant effect on the ferromagnetism with Si doping in Ga1−xCrxN is explained by the percolation theory of bound magnetic polarons.
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影响因子：
3.2
作者：
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通讯作者：
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影响因子：
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影响因子：
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作者：
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通讯作者：
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影响因子：
3.7
作者：
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通讯作者：
Dietl, Tomasz