UV laser microprocessing and post chemical etching on ultrathin Al2O3 ceramic substrate
UV laser microprocessing and post chemical etching on ultrathin Al2O3 ceramic substrate
复制标题
超薄 Al2O3 陶瓷基板上的紫外激光微加工和后化学蚀刻
DOI：
10.1016/j.jeurceramsoc.2011.03.034
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发表时间：
2011-08
影响因子：
5.7
通讯作者：
Cao Yu
中科院分区：
文献类型：
--
作者：
Zhang Fei;Duan Jun;Zeng Xiaoyan;Cao Yu
本研究利用Nd：YVO4紫外光激光器对用作多层微芯片衬底的超薄(125μm)陶瓷板进行了微加工。采用4×4正交设计，研究了激光功率密度、激光频率、激光扫描速度和道次延迟等工艺参数对微细加工精度和加工质量(切缝宽度和切缝侧壁算术平均粗糙度)的影响。确定并优化了关键工艺参数，在保持较高生产效率的前提下，实现了较小的开缝宽度和最小的开缝侧墙比。随后对激光加工区域进行化学蚀刻，通过去除碎屑和薄重铸层来减少缝隙表面和缝隙侧壁粗糙度，以达到所需的尺寸精度和镀金后处理。结果表明，激光微细加工和化学腐蚀可获得表面清洁、无裂纹的缺口侧壁，表面粗糙度Ra=0.16μm。
In this study, an Nd:YVO4UV laser was used for microprocessing ultrathin (125 μm) ceramic plates for use as a multi-layer microchip substrate. The effects of the UV laser microprocessing parameters, including laser power density, frequency, laser scanning speed, and pass delay on microprocessing accuracy and quality (kerf width and arithmetic average roughnessRaon the kerf sidewall) were investigated by means of a 4 × 4 orthogonal design. The key processing parameters were determined and optimized for small kerf width and minimalRaof the kerf sidewall while retaining high production efficiency. Subsequent chemical etching of the laser processed areas was performed to reduce the kerf surface and kerf sidewall roughness by removing debris and the thin recast layer for the required size precision and post gilding treatment. The results showed that a clean surface and crack-free kerf sidewall with roughnessRaof 0.16 μm could be achieved by laser microprocessing and chemical etching.
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影响因子：
2.1
作者：
F. Quintero;J. Pou;F. Lusquiños;M. Larosi;R. Soto;M. Pérez-Amor
通讯作者：
F. Quintero;J. Pou;F. Lusquiños;M. Larosi;R. Soto;M. Pérez-Amor
影响因子：
4.5
作者：
I. Tuersley;T. Hoult;I. Pashby
通讯作者：
I. Tuersley;T. Hoult;I. Pashby
影响因子：
6.7
作者：
W. Perrie;A. Rushton;M. Gill;P. Fox;W. O'Neill
通讯作者：
W. Perrie;A. Rushton;M. Gill;P. Fox;W. O'Neill
DOI：
10.1117/12.352697
发表时间：
1999-07
期刊：
--
影响因子：
--
作者：
Dirk Hellrung;L. Yeh;F. Depiereux;A. Gillner;R. Poprawe
通讯作者：
Dirk Hellrung;L. Yeh;F. Depiereux;A. Gillner;R. Poprawe
影响因子：
2.1
作者：
F. Quintero;J. Pou;F. Lusquiños;M. Boutinguiza;R. Soto;M. Pérez-Amor;F. Wagner
通讯作者：
F. Quintero;J. Pou;F. Lusquiños;M. Boutinguiza;R. Soto;M. Pérez-Amor;F. Wagner