Significant enhancement in thermoelectric properties of half-Heusler compound TiNiSn by grain boundary engineering
Significant enhancement in thermoelectric properties of half-Heusler compound TiNiSn by grain boundary engineering
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通过晶界工程显着提高半霍斯勒化合物TiNiSn的热电性能
DOI：
10.1016/j.jallcom.2022.163686
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发表时间：
2022-01
影响因子：
6.2
通讯作者：
Sen Yang
中科院分区：
文献类型：
--
作者：
Xiaolin Zhang;Shuang Li;Bo Zou;Pengfei Xu;Yilin Song;Biao Xu;Yifeng Wang;Guodong Tang;Sen Yang
半Heusler化合物MNiSnN(M=Ti，Zr，Hf)由于其组成元素丰富无毒，在热电领域受到越来越多的关注。同时，它具有良好的热稳定性和较高的机械强度。在此，通过在烧结前将粉碎的粉末通过筛子来实现对本征TiNiSn的热电性能的显著提高。由于平均颗粒尺寸减小所引起的能量过滤效应，加上电导率略有下降，塞贝克系数急剧增加，导致功率因数显著提高。此外，晶界散射的增强还可以进一步降低晶格的热导率。因此，对于未掺杂的TiNiSn，在820K时获得了最大的优值系数(ZT)为0.84。这项工作表明，晶界工程可以作为改善其他半-Heusler化合物热电性能的有效方法。
Half-Heusler compounds MNiSn (M = Ti, Zr, Hf) have attracted increasing attentions in the field of thermoelectrics, since their constituent elements are non-toxic and abundant. Meanwhile, it possesses good thermal stability as well as high mechanical strength. Herein, a substantial enhancement to the thermoelectric performance of intrinsic TiNiSn is achieved by passing the pulverized powders through the sieve prior to sintering. The Seebeck coefficient has increased sharply owing to the energy filtering effect, which is induced by the reduction in the average grain sizes, combined with a slightly decreased electrical conductivity, leading to a significant improvement in power factor. Moreover, the lattice thermal conductivity can be further reducedviathe enhancement of the grain boundary scattering. Consequently, a maximum figure-of-merit (zT) value of 0.84 at 820 K is achieved for un-doped TiNiSn. This work indicates that the grain boundary engineering may serve as an effective method for improving the thermoelectric performance of other half-Heusler compounds.
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影响因子：
--
作者：
Y. Sadia;Mor Elegrably;O. Ben-Nun;Y. Marciano;Y. Gelbstein
通讯作者：
Y. Sadia;Mor Elegrably;O. Ben-Nun;Y. Marciano;Y. Gelbstein
影响因子：
29.4
作者：
Snyder, G. Jeffrey;Snyder, Alemayouh H.;Niu, Changning
通讯作者：
Niu, Changning
影响因子：
3.7
作者：
Jia, Tiantian;Chen, Gang;Zhang, Yongsheng
通讯作者：
Zhang, Yongsheng
影响因子：
4.4
作者：
Kim, Sung-Wng;Kimura, Yoshisato;Mishima, Yoshinao
通讯作者：
Mishima, Yoshinao
DOI：
10.1201/b11891-12
发表时间：
2012-04
期刊：
--
影响因子：
--
作者：
E. Flage-Larsen;O. Løvvik
通讯作者：
E. Flage-Larsen;O. Løvvik